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Neutron irradiation induced defects in oxides and their impact on the oxide properties

  • M. Haseman
  • , C. B. Somodi
  • , P. Stepanov
  • , D. E. Wall
  • , L. A. Boatner
  • , P. Hosemann
  • , Y. Q. Wang
  • , B. P. Uberuaga
  • , F. A. Selim

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Understanding the irradiation-induced defects in oxides is of interest for a wide range of applications. ZnO is an interesting oxide with mixed ionic and covalent bonding that contains a variety of point defect structures—making it an excellent model for studying irradiation-induced defects and their impact on properties. Here, we investigate the effects of neutron irradiation on the formation of defects and on the structural, optical, and electrical properties of ZnO single crystals. We observe the formation of vacancies and voids via positron annihilation spectroscopy. Neutron irradiation led to a significant deterioration of the ZnO structure and formed a high concentration of point defects, vacancy clusters, and voids with large disparities in their structure across variable irradiation times. It also led to significant changes in the optical properties and sample color. Irradiation for 444 h induced a high concentration of Cu acceptors as well as a high concentration of Ga donors. Temperature-dependent Hall effect measurements revealed the competing production of donors and acceptors and showed an increase in the slope of the carrier freeze-out curve with increasing irradiation dose. This work demonstrates the combined effects of neutron irradiation in producing a wide range of structural defects, impurities, and dopants in oxides and their enormous impact on modifying the oxide structure and both the optical and electronic properties. It particularly emphasizes the importance of considering the production of new impurities and dopants during the neutron irradiation of oxides.
Original languageEnglish
Article number215901
JournalJournal of Applied Physics
Volume129
Issue number21
DOIs
StatePublished - Jun 7 2021

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