NEW APPROACH TO THE STUDY OF SOLID-STATE REACTIONS.

Y. Kouth Simpson; C. B. Carter

NEW APPROACH TO THE STUDY OF SOLID-STATE REACTIONS.

Y. Kouth Simpson
, C. B. Carter

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A new technique for the study of solid-state reactions is described. The new approach uses a thin-film specimen geometry and is ideal for transmission-electron-microscopy studies of the same specimen before and after the occurrence of solid-state reactions. The technique is illustrated by an investigation of the growth of Ni-Al spinel on, and into, an alumina substrate. Near-topotactic relationships and exact topotactic alignment of the spinel and the alumina were both found. The left brace 111 right brace plane of the spinel is parallel either to (0001) plane of the alumina or to the left brace 112 OVER BAR 0 right brace plane of the alumina. Further heat treatment of such samples directly reveals the mechanism by which the spinel particles grow.

Original language	English
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	53
Issue number	1
State	Published - Jan 1 1986
Externally published	Yes

Cite this

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title = "NEW APPROACH TO THE STUDY OF SOLID-STATE REACTIONS.",

abstract = "A new technique for the study of solid-state reactions is described. The new approach uses a thin-film specimen geometry and is ideal for transmission-electron-microscopy studies of the same specimen before and after the occurrence of solid-state reactions. The technique is illustrated by an investigation of the growth of Ni-Al spinel on, and into, an alumina substrate. Near-topotactic relationships and exact topotactic alignment of the spinel and the alumina were both found. The left brace 111 right brace plane of the spinel is parallel either to (0001) plane of the alumina or to the left brace 112 OVER BAR 0 right brace plane of the alumina. Further heat treatment of such samples directly reveals the mechanism by which the spinel particles grow.",

author = "Simpson, \{Y. Kouth\} and Carter, \{C. B.\}",

year = "1986",

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language = "English",

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N2 - A new technique for the study of solid-state reactions is described. The new approach uses a thin-film specimen geometry and is ideal for transmission-electron-microscopy studies of the same specimen before and after the occurrence of solid-state reactions. The technique is illustrated by an investigation of the growth of Ni-Al spinel on, and into, an alumina substrate. Near-topotactic relationships and exact topotactic alignment of the spinel and the alumina were both found. The left brace 111 right brace plane of the spinel is parallel either to (0001) plane of the alumina or to the left brace 112 OVER BAR 0 right brace plane of the alumina. Further heat treatment of such samples directly reveals the mechanism by which the spinel particles grow.

AB - A new technique for the study of solid-state reactions is described. The new approach uses a thin-film specimen geometry and is ideal for transmission-electron-microscopy studies of the same specimen before and after the occurrence of solid-state reactions. The technique is illustrated by an investigation of the growth of Ni-Al spinel on, and into, an alumina substrate. Near-topotactic relationships and exact topotactic alignment of the spinel and the alumina were both found. The left brace 111 right brace plane of the spinel is parallel either to (0001) plane of the alumina or to the left brace 112 OVER BAR 0 right brace plane of the alumina. Further heat treatment of such samples directly reveals the mechanism by which the spinel particles grow.

UR - https://www.scopus.com/pages/publications/0022523896

M3 - Article

SN - 0141-8610

VL - 53

JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

IS - 1

ER -

NEW APPROACH TO THE STUDY OF SOLID-STATE REACTIONS.

Abstract

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