Abstract
We report the first observation of a class of new reconstructions on clean silicon (111) surfaces. The surfaces are prepared by a combination of laser and thermal annealing and the new structures are studied with a tunneling microscope. c-(4×2)and(2×2) regions populate the ordered parts of the surface directly after laser annealing. Subsequent partial thermal anneals result in a surface containing (5×5), (7×7), (9×9), and other intermediate structures. These observations' bearing on the connection between germanium and silicon reconstructions is discussed. © 1986 The American Physical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 1020-1023 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 57 |
| Issue number | 8 |
| DOIs | |
| State | Published - Jan 1 1986 |
| Externally published | Yes |
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