OMVPE of GaAsSbN for long wavelength emission on GaAs

GaAsSbN was grown by organometallic vapor phase epitaxy (OMVPE) as an alternative material to InGaAsN for long wavelength emission on GaAs substrates. OMVPE of GaAsSbN using trimethylgallium, 100% arsine, trimethylantimony, and 1,1-dimethylhydrazine was found to be kinetically limited at growth temperatures ranging from 520°C to 600°C, with an activation energy of 10.4kcal/mol. The growth rate was linearly dependent on the group III flow and has a complex dependence on the group V constituents. A room temperature photoluminescence wavelength of > 1.3 μm was observed for unannealed GaAs0.69Sb0.3N0.01. Low temperature (4K) photoluminescence of GaAs0.69Sb0.3N0.01 shows an increase in FWHM of 2.4-3.4 times the FWHM of GaAs0.7Sb 0.3, a red shift of 55-77meV, and a decrease in intensity of one to two orders of magnitude. Hall measurements indicate a behavior similar to that of InGaAsN, a 300K hole mobility of 350cm2/V-s with a 1.0 × 1017/cm3 background hole concentration, and a 77K mobility of 1220cm2/V-s with a background hole concentration of 4.8 × 1016/cm3. The hole mass of GaAs 0.7Sb0.3/GaAs heterostructures was estimated at 0.37-0.40mo, and we estimate an electron mass of 0.2-0.3m o for the GaAs0.69Sb0.3N0.01/GaAs system. The reduced exciton mass for GaAsSbN was estimated at about twice that found for GaAsSb by a comparison of diamagnetic shift vs. magnetic field. © 2003 Elsevier B.V. All rights reserved.