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Optical and Electrical Analysis of Isolation Scheme for p-GaSb by Proton Implantation

  • Sk Shafaat Saud Nikor
  • , Md Saiful Islam Sumon
  • , Shrivatch Sankar
  • , Like Ma
  • , Victor J. Patel
  • , Samuel D. Hawkins
  • , Sadhvikas J. Addamane
  • , Shamsul Arafin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effect of proton implantation as isolation implant on the optical absorption and electrical resistivity of low-bandgap p-GaSb is analyzed. Subsequent annealing minimizes the implantation-induced optical absorption while retaining a high electrical resistivity.

Original languageEnglish
Title of host publication2025 Conference on Lasers and Electro-Optics, CLEO 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781957171500
StatePublished - 2025
Externally publishedYes
Event2025 Conference on Lasers and Electro-Optics, CLEO 2025 - Long Beach, United States
Duration: May 4 2025May 9 2025

Publication series

Name2025 Conference on Lasers and Electro-Optics, CLEO 2025

Conference

Conference2025 Conference on Lasers and Electro-Optics, CLEO 2025
Country/TerritoryUnited States
CityLong Beach
Period05/4/2505/9/25

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