Optical and structural characterization of copper indium disulfide thin films

D. O. Henderson; R. Mu; A. Ueda; M. H. Wu; E. M. Gordon; Y. S. Tung; M. Huang; J. Keay; L. C. Feldman; Jennifer Ann Hollingsworth; W. E. Buhro; J. D. Harris; A. F. Hepp; R. P. Raffaelle

doi:10.1016/S0261-3069(01)00019-X

Optical and structural characterization of copper indium disulfide thin films

D. O. Henderson
, R. Mu
, A. Ueda
, M. H. Wu
, E. M. Gordon
, Y. S. Tung
, M. Huang
, J. Keay
, L. C. Feldman
, Jennifer Ann Hollingsworth
, W. E. Buhro
, J. D. Harris
, A. F. Hepp
, R. P. Raffaelle

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Thin films of copper indium disulfide (CuInS₂) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2% of stoichiometrically correct CuInS₂. The thickness of the films was found to be approximately 1.0 μm. An optical band-gap of approximately 1.44 eV for this material was determined by optical transmission spectroscopy. Reflectance spectroscopy identified phonon bands centered at 225, 291 and 317 cm^-1.

Original language	English
Pages (from-to)	585-589
Number of pages	5
Journal	Materials and Design
Volume	22
Issue number	7
DOIs	https://doi.org/10.1016/S0261-3069(01)00019-X
State	Published - Oct 2001

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title = "Optical and structural characterization of copper indium disulfide thin films",

abstract = "Thin films of copper indium disulfide (CuInS2) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2\% of stoichiometrically correct CuInS2. The thickness of the films was found to be approximately 1.0 μm. An optical band-gap of approximately 1.44 eV for this material was determined by optical transmission spectroscopy. Reflectance spectroscopy identified phonon bands centered at 225, 291 and 317 cm-1.",

author = "Henderson, \{D. O.\} and R. Mu and A. Ueda and Wu, \{M. H.\} and Gordon, \{E. M.\} and Tung, \{Y. S.\} and M. Huang and J. Keay and Feldman, \{L. C.\} and Hollingsworth, \{Jennifer Ann\} and Buhro, \{W. E.\} and Harris, \{J. D.\} and Hepp, \{A. F.\} and Raffaelle, \{R. P.\}",

year = "2001",

month = oct,

doi = "10.1016/S0261-3069(01)00019-X",

language = "English",

volume = "22",

pages = "585--589",

journal = "Materials and Design",

issn = "0264-1275",

publisher = "Elsevier B.V.",

number = "7",

}

TY - JOUR

T1 - Optical and structural characterization of copper indium disulfide thin films

AU - Henderson, D. O.

AU - Mu, R.

AU - Ueda, A.

AU - Wu, M. H.

AU - Gordon, E. M.

AU - Tung, Y. S.

AU - Huang, M.

AU - Keay, J.

AU - Feldman, L. C.

AU - Hollingsworth, Jennifer Ann

AU - Buhro, W. E.

AU - Harris, J. D.

AU - Hepp, A. F.

AU - Raffaelle, R. P.

PY - 2001/10

Y1 - 2001/10

N2 - Thin films of copper indium disulfide (CuInS2) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2% of stoichiometrically correct CuInS2. The thickness of the films was found to be approximately 1.0 μm. An optical band-gap of approximately 1.44 eV for this material was determined by optical transmission spectroscopy. Reflectance spectroscopy identified phonon bands centered at 225, 291 and 317 cm-1.

AB - Thin films of copper indium disulfide (CuInS2) were synthesized by spray chemical vapor deposition. Rutherford backscattering measurements were used to determine the composition and thickness of the films. The elemental ratios were found to be within 2% of stoichiometrically correct CuInS2. The thickness of the films was found to be approximately 1.0 μm. An optical band-gap of approximately 1.44 eV for this material was determined by optical transmission spectroscopy. Reflectance spectroscopy identified phonon bands centered at 225, 291 and 317 cm-1.

UR - https://www.scopus.com/pages/publications/6644221053

U2 - 10.1016/S0261-3069(01)00019-X

DO - 10.1016/S0261-3069(01)00019-X

M3 - Article

SN - 0264-1275

VL - 22

SP - 585

EP - 589

JO - Materials and Design

JF - Materials and Design

IS - 7

ER -

Optical and structural characterization of copper indium disulfide thin films

Abstract

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