Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells

C. Wetzel; J. Nelson; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1116/1.1432966

Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells

C. Wetzel
, J. Nelson
, S. Kamiyama
, H. Amano
, I. Akasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The electronic band structure in polarized GaInN/GaN heterostructures was studied in photoluminescence excitation spectroscopy. It was found that the absorption and emission spectra of GaInN/GaN quantum wells (QW) optimized for laser diode applications can be described by discrete electronic levels within QW region. Results indicated that absorption and emission were connected by discrete transfer functions.

Original language	English
Title of host publication	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Pages	216-218
Number of pages	3
Volume	20
Edition	1
DOIs	https://doi.org/10.1116/1.1432966
State	Published - Jan 1 2002
Externally published	Yes

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title = "Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells",

abstract = "The electronic band structure in polarized GaInN/GaN heterostructures was studied in photoluminescence excitation spectroscopy. It was found that the absorption and emission spectra of GaInN/GaN quantum wells (QW) optimized for laser diode applications can be described by discrete electronic levels within QW region. Results indicated that absorption and emission were connected by discrete transfer functions.",

author = "C. Wetzel and J. Nelson and S. Kamiyama and H. Amano and I. Akasaki",

year = "2002",

month = jan,

day = "1",

doi = "10.1116/1.1432966",

language = "English",

volume = "20",

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booktitle = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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T1 - Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells

AU - Wetzel, C.

AU - Nelson, J.

AU - Kamiyama, S.

AU - Amano, H.

AU - Akasaki, I.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The electronic band structure in polarized GaInN/GaN heterostructures was studied in photoluminescence excitation spectroscopy. It was found that the absorption and emission spectra of GaInN/GaN quantum wells (QW) optimized for laser diode applications can be described by discrete electronic levels within QW region. Results indicated that absorption and emission were connected by discrete transfer functions.

AB - The electronic band structure in polarized GaInN/GaN heterostructures was studied in photoluminescence excitation spectroscopy. It was found that the absorption and emission spectra of GaInN/GaN quantum wells (QW) optimized for laser diode applications can be described by discrete electronic levels within QW region. Results indicated that absorption and emission were connected by discrete transfer functions.

UR - https://www.scopus.com/pages/publications/0036124699

U2 - 10.1116/1.1432966

DO - 10.1116/1.1432966

M3 - Conference contribution

VL - 20

SP - 216

EP - 218

BT - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

ER -

Optical transitions in piezoelectrically polarized GaInN/GaN quantum wells

Abstract

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