Abstract
We report optically pumped 1 μm low threshold GaAs photonic crystal surface emitting lasers. The GaAs photonic crystal is etched on 3-period InGaAs/AlGaAs MQW heterostructure. A laser peak is achieved at 1,006 nm with a linewidth of 0.6 nm at 5 kW/cm2 threshold power density.
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE Photonics Conference, IPC 2019 - Proceedings |
| DOIs | |
| State | Published - Sep 1 2019 |
| Externally published | Yes |
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