Skip to main navigation Skip to search Skip to main content

Optically Pumped 1 μm Low Threshold Photonic Crystal Surface Emitting Lasers Grown on GaAs Substrate

  • Akhil R.K. Kalapala
  • , Weidong Zhou
  • , Seungwon Yeom
  • , Sadhvikas J. Addamane
  • , Kevin J. Reilly
  • , Alex Song
  • , Ricky Gibson
  • , Ganesh Balakrishnan
  • , Robert Bedford
  • , Shanhui Fan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We report optically pumped 1 μm low threshold GaAs photonic crystal surface emitting lasers. The GaAs photonic crystal is etched on 3-period InGaAs/AlGaAs MQW heterostructure. A laser peak is achieved at 1,006 nm with a linewidth of 0.6 nm at 5 kW/cm2 threshold power density.
Original languageEnglish
Title of host publication2019 IEEE Photonics Conference, IPC 2019 - Proceedings
DOIs
StatePublished - Sep 1 2019
Externally publishedYes

Fingerprint

Dive into the research topics of 'Optically Pumped 1 μm Low Threshold Photonic Crystal Surface Emitting Lasers Grown on GaAs Substrate'. Together they form a unique fingerprint.

Cite this