Optimisation of 635 nm tensile strained GaInP laser diodes

P. M. Smowton; G. M. Lewis; W. W. Chow; G. Jones; S. Bland

Optimisation of 635 nm tensile strained GaInP laser diodes

P. M. Smowton
, G. M. Lewis
, W. W. Chow
, G. Jones
, S. Bland

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The affect of the strain on all of the recombination mechanisms which make up the total threshold current within 635nm laser diodes was measured with a range of strain-well width combinations. Non-radiative recombination within the quantum well is an important proportion of the total threshold current and it also determines the optimum strain-well width combination. The influence of strain on the operation of a laser was determined by its effect on the optical gain and the spontaneous recombination rates associated with the TE and TM polarization modes.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Pages	127-128
Number of pages	2
State	Published - Jan 1 2002
Externally published	Yes

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title = "Optimisation of 635 nm tensile strained GaInP laser diodes",

abstract = "The affect of the strain on all of the recombination mechanisms which make up the total threshold current within 635nm laser diodes was measured with a range of strain-well width combinations. Non-radiative recombination within the quantum well is an important proportion of the total threshold current and it also determines the optimum strain-well width combination. The influence of strain on the operation of a laser was determined by its effect on the optical gain and the spontaneous recombination rates associated with the TE and TM polarization modes.",

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year = "2002",

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AU - Smowton, P. M.

AU - Lewis, G. M.

AU - Chow, W. W.

AU - Jones, G.

AU - Bland, S.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The affect of the strain on all of the recombination mechanisms which make up the total threshold current within 635nm laser diodes was measured with a range of strain-well width combinations. Non-radiative recombination within the quantum well is an important proportion of the total threshold current and it also determines the optimum strain-well width combination. The influence of strain on the operation of a laser was determined by its effect on the optical gain and the spontaneous recombination rates associated with the TE and TM polarization modes.

AB - The affect of the strain on all of the recombination mechanisms which make up the total threshold current within 635nm laser diodes was measured with a range of strain-well width combinations. Non-radiative recombination within the quantum well is an important proportion of the total threshold current and it also determines the optimum strain-well width combination. The influence of strain on the operation of a laser was determined by its effect on the optical gain and the spontaneous recombination rates associated with the TE and TM polarization modes.

UR - https://www.scopus.com/pages/publications/0036448475

M3 - Conference contribution

SP - 127

EP - 128

BT - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

Optimisation of 635 nm tensile strained GaInP laser diodes

Abstract

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