Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity

C. Wetzel; P. Li; T. Detchprohm; J. S. Nelson

doi:10.1002/pssc.200461391

Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity

C. Wetzel
, P. Li
, T. Detchprohm
, J. S. Nelson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

Development progress of high power 525 nm green LEDs employing GaInN/GaN active layers optimized for high morphological homogeneity is presented. We analyze the benefits of this process for the reproducibility in epitaxial growth and processing as well as across the wafer uniformity. We show that by means of our approach performance in terms of dominant wavelength and output power are highly reproducible across the wafer and from run to run. This lends special relevance also to any spectroscopic analysis of such sample material. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Title of host publication	Physica Status Solidi C: Conferences
Pages	2871-2873
Number of pages	3
Volume	2
Edition	7
DOIs	https://doi.org/10.1002/pssc.200461391
State	Published - Nov 7 2005
Externally published	Yes

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10.1002/pssc.200461391

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title = "Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity",

abstract = "Development progress of high power 525 nm green LEDs employing GaInN/GaN active layers optimized for high morphological homogeneity is presented. We analyze the benefits of this process for the reproducibility in epitaxial growth and processing as well as across the wafer uniformity. We show that by means of our approach performance in terms of dominant wavelength and output power are highly reproducible across the wafer and from run to run. This lends special relevance also to any spectroscopic analysis of such sample material. {\textcopyright} 2005 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

author = "C. Wetzel and P. Li and T. Detchprohm and Nelson, \{J. S.\}",

year = "2005",

month = nov,

day = "7",

doi = "10.1002/pssc.200461391",

language = "English",

volume = "2",

pages = "2871--2873",

booktitle = "Physica Status Solidi C: Conferences",

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TY - GEN

T1 - Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity

AU - Wetzel, C.

AU - Li, P.

AU - Detchprohm, T.

AU - Nelson, J. S.

PY - 2005/11/7

Y1 - 2005/11/7

N2 - Development progress of high power 525 nm green LEDs employing GaInN/GaN active layers optimized for high morphological homogeneity is presented. We analyze the benefits of this process for the reproducibility in epitaxial growth and processing as well as across the wafer uniformity. We show that by means of our approach performance in terms of dominant wavelength and output power are highly reproducible across the wafer and from run to run. This lends special relevance also to any spectroscopic analysis of such sample material. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - Development progress of high power 525 nm green LEDs employing GaInN/GaN active layers optimized for high morphological homogeneity is presented. We analyze the benefits of this process for the reproducibility in epitaxial growth and processing as well as across the wafer uniformity. We show that by means of our approach performance in terms of dominant wavelength and output power are highly reproducible across the wafer and from run to run. This lends special relevance also to any spectroscopic analysis of such sample material. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

UR - https://www.scopus.com/pages/publications/25144523225

U2 - 10.1002/pssc.200461391

DO - 10.1002/pssc.200461391

M3 - Conference contribution

VL - 2

SP - 2871

EP - 2873

BT - Physica Status Solidi C: Conferences

ER -

Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity

Abstract

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