Oriented aluminum nitride thin films deposited by pulsed-laser ablation

M. Grant Norton; Paul G. Kotula; C. Barry Carter

doi:10.1063/1.349352

Oriented aluminum nitride thin films deposited by pulsed-laser ablation

M. Grant Norton
, Paul G. Kotula
, C. Barry Carter

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Single-phase aluminum nitride thin films with preferred crystallographic orientations have been grown on single-crystal sapphire by pulsed-laser ablation. The orientation of the films was found to be determined by the atmosphere and the nitrogen pressure during deposition and the substrate temperature. The films were examined by x-ray diffraction, and scanning electron microscopy.

Original language	English
Pages (from-to)	2871-2873
Number of pages	3
Journal	Journal of Applied Physics
Volume	70
Issue number	5
DOIs	https://doi.org/10.1063/1.349352
State	Published - Dec 1 1991
Externally published	Yes

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@article{25f7cccf2a0c4744b8bb4ba9237fde13,

title = "Oriented aluminum nitride thin films deposited by pulsed-laser ablation",

abstract = "Single-phase aluminum nitride thin films with preferred crystallographic orientations have been grown on single-crystal sapphire by pulsed-laser ablation. The orientation of the films was found to be determined by the atmosphere and the nitrogen pressure during deposition and the substrate temperature. The films were examined by x-ray diffraction, and scanning electron microscopy.",

author = "Norton, \{M. Grant\} and Kotula, \{Paul G.\} and Carter, \{C. Barry\}",

year = "1991",

month = dec,

day = "1",

doi = "10.1063/1.349352",

language = "English",

volume = "70",

pages = "2871--2873",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Oriented aluminum nitride thin films deposited by pulsed-laser ablation

AU - Norton, M. Grant

AU - Kotula, Paul G.

AU - Carter, C. Barry

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Single-phase aluminum nitride thin films with preferred crystallographic orientations have been grown on single-crystal sapphire by pulsed-laser ablation. The orientation of the films was found to be determined by the atmosphere and the nitrogen pressure during deposition and the substrate temperature. The films were examined by x-ray diffraction, and scanning electron microscopy.

AB - Single-phase aluminum nitride thin films with preferred crystallographic orientations have been grown on single-crystal sapphire by pulsed-laser ablation. The orientation of the films was found to be determined by the atmosphere and the nitrogen pressure during deposition and the substrate temperature. The films were examined by x-ray diffraction, and scanning electron microscopy.

UR - https://www.scopus.com/pages/publications/0001415536

U2 - 10.1063/1.349352

DO - 10.1063/1.349352

M3 - Article

SN - 0021-8979

VL - 70

SP - 2871

EP - 2873

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Oriented aluminum nitride thin films deposited by pulsed-laser ablation

Abstract

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