Abstract
The self-consistent pseudopotential method is used to investigate the origin of the valence- and conduction-band edge states in thin [001] superlattices of (GaAs)n-(AlAs)n, for n=2, 3, and 4. We find that these superlattices have a staggered band alignment (type II superlattice), with the highest occupied valence-band state (hole) localized in the GaAs region and the lowest unoccupied conduction-band state (electron) localized in the AlAs region. The change in the lowest conduction-band edge states in the GaAs and AlAs region with layer thickness, suggests a transition to a nonstaggered alignment (type I superlattice) at large layer thicknesses. A critical layer thickness is estimated for this transition.
| Original language | English |
|---|---|
| Pages (from-to) | 1595-1597 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 50 |
| Issue number | 22 |
| DOIs | |
| State | Published - Dec 1 1987 |
| Externally published | Yes |
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