Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

Y. Xiong; Y. Zhou; Z. H. Zhu; Y. H. Lo; C. Ji; S. A. Bashar; A. A. Allerman; T. Hargett; R. Sieg; K. D. Choquette

doi:10.1109/68.823486

Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

Y. Xiong
, Y. Zhou
, Z. H. Zhu
, Y. H. Lo
, C. Ji
, S. A. Bashar
, A. A. Allerman
, T. Hargett
, R. Sieg
, K. D. Choquette

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Oxide-defined 850-nm vertical cavity surface emitting lasers (VCSEL) on Si substrates were fabricated employing a novel low-temperature wafer bonding technique. Devices exhibit a differential quantum efficiency as high as 53% and a light output power of 7.1 mW at room temperature without a heat sink, illustrating low thermal resistance of the bonding interface.

Original language	English
Pages (from-to)	110-112
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	12
Issue number	2
DOIs	https://doi.org/10.1109/68.823486
State	Published - Feb 1 2000
Externally published	Yes

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title = "Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates",

abstract = "Oxide-defined 850-nm vertical cavity surface emitting lasers (VCSEL) on Si substrates were fabricated employing a novel low-temperature wafer bonding technique. Devices exhibit a differential quantum efficiency as high as 53\% and a light output power of 7.1 mW at room temperature without a heat sink, illustrating low thermal resistance of the bonding interface.",

author = "Y. Xiong and Y. Zhou and Zhu, \{Z. H.\} and Lo, \{Y. H.\} and C. Ji and Bashar, \{S. A.\} and Allerman, \{A. A.\} and T. Hargett and R. Sieg and Choquette, \{K. D.\}",

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AU - Xiong, Y.

AU - Zhou, Y.

AU - Zhu, Z. H.

AU - Lo, Y. H.

AU - Ji, C.

AU - Bashar, S. A.

AU - Allerman, A. A.

AU - Hargett, T.

AU - Sieg, R.

AU - Choquette, K. D.

PY - 2000/2/1

Y1 - 2000/2/1

N2 - Oxide-defined 850-nm vertical cavity surface emitting lasers (VCSEL) on Si substrates were fabricated employing a novel low-temperature wafer bonding technique. Devices exhibit a differential quantum efficiency as high as 53% and a light output power of 7.1 mW at room temperature without a heat sink, illustrating low thermal resistance of the bonding interface.

AB - Oxide-defined 850-nm vertical cavity surface emitting lasers (VCSEL) on Si substrates were fabricated employing a novel low-temperature wafer bonding technique. Devices exhibit a differential quantum efficiency as high as 53% and a light output power of 7.1 mW at room temperature without a heat sink, illustrating low thermal resistance of the bonding interface.

UR - https://www.scopus.com/pages/publications/0034135688

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DO - 10.1109/68.823486

M3 - Article

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SP - 110

EP - 112

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

Abstract

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