Parametric study of Ga<inf>1-x</inf>In<inf>x</inf>N<inf>y</inf>As<inf>1-y</inf>GaAs quantum wells for 1.3-μm laser operation

W. W. Chow; J. S. Harris

doi:10.1063/1.1561154

Parametric study of Ga<inf>1-x</inf>In<inf>x</inf>N<inf>y</inf>As<inf>1-y</inf>GaAs quantum wells for 1.3-μm laser operation

W. W. Chow
, J. S. Harris

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The gain properties in Ga1-xInxNyAs1-y/GaAs quantum wells were investigated by using a microscopic laser theory. The combinations of x and y giving laser emissions around 1.30 μm were considered. It was found that the threshold current density for a given threshold gain is relatively insensitive to alloy composition in structures not dominated by nonradiative losses.

Original language	English
Pages (from-to)	1673-1675
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	11
DOIs	https://doi.org/10.1063/1.1561154
State	Published - Mar 17 2003
Externally published	Yes

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10.1063/1.1561154

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title = "Parametric study of Ga1-xInxNyAs1-yGaAs quantum wells for 1.3-μm laser operation",

abstract = "The gain properties in Ga1-xInxNyAs1-y/GaAs quantum wells were investigated by using a microscopic laser theory. The combinations of x and y giving laser emissions around 1.30 μm were considered. It was found that the threshold current density for a given threshold gain is relatively insensitive to alloy composition in structures not dominated by nonradiative losses.",

author = "Chow, \{W. W.\} and Harris, \{J. S.\}",

year = "2003",

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language = "English",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Parametric study of Ga1-xInxNyAs1-yGaAs quantum wells for 1.3-μm laser operation

AU - Chow, W. W.

AU - Harris, J. S.

PY - 2003/3/17

Y1 - 2003/3/17

N2 - The gain properties in Ga1-xInxNyAs1-y/GaAs quantum wells were investigated by using a microscopic laser theory. The combinations of x and y giving laser emissions around 1.30 μm were considered. It was found that the threshold current density for a given threshold gain is relatively insensitive to alloy composition in structures not dominated by nonradiative losses.

AB - The gain properties in Ga1-xInxNyAs1-y/GaAs quantum wells were investigated by using a microscopic laser theory. The combinations of x and y giving laser emissions around 1.30 μm were considered. It was found that the threshold current density for a given threshold gain is relatively insensitive to alloy composition in structures not dominated by nonradiative losses.

UR - https://www.scopus.com/pages/publications/0037451381

U2 - 10.1063/1.1561154

DO - 10.1063/1.1561154

M3 - Article

SN - 0003-6951

VL - 82

SP - 1673

EP - 1675

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Parametric study of Ga<inf>1-x</inf>In<inf>x</inf>N<inf>y</inf>As<inf>1-y</inf>GaAs quantum wells for 1.3-μm laser operation

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