Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

I. Brener; M. Olszakier; E. Cohen; E. Ehrenfreund; Arza Ron; L. Pfeiffer

doi:10.1103/PhysRevB.46.7927

Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

I. Brener
, M. Olszakier
, E. Cohen
, E. Ehrenfreund
, Arza Ron
, L. Pfeiffer

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale. © 1992 The American Physical Society.

Original language	English
Pages (from-to)	7927-7930
Number of pages	4
Journal	Physical Review B
Volume	46
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.46.7927
State	Published - Jan 1 1992
Externally published	Yes

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title = "Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells",

abstract = "We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale. {\textcopyright} 1992 The American Physical Society.",

author = "I. Brener and M. Olszakier and E. Cohen and E. Ehrenfreund and Arza Ron and L. Pfeiffer",

year = "1992",

month = jan,

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doi = "10.1103/PhysRevB.46.7927",

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T1 - Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

AU - Brener, I.

AU - Olszakier, M.

AU - Cohen, E.

AU - Ehrenfreund, E.

AU - Ron, Arza

AU - Pfeiffer, L.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale. © 1992 The American Physical Society.

AB - We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale. © 1992 The American Physical Society.

UR - https://www.scopus.com/pages/publications/0001377191

U2 - 10.1103/PhysRevB.46.7927

DO - 10.1103/PhysRevB.46.7927

M3 - Article

SN - 0163-1829

VL - 46

SP - 7927

EP - 7930

JO - Physical Review B

JF - Physical Review B

IS - 12

ER -

Particle localization and phonon sidebands in GaAs/AlxGa1-xAs multiple quantum wells

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