Path towards a vertical TFET enabled by atomic precision advanced manufacturing

Tzu Ming Lu; Xujiao Gao; Evan M. Anderson; Juan P. Mendez; De Anna M. Campbell; Jeffrey A. Ivie; Scott W. Schmucker; Albert Grine; Ping Lu; Lisa A. Tracy; Reza Arghavani; Shashank Misra

doi:10.1109/SNW51795.2021.00029

Path towards a vertical TFET enabled by atomic precision advanced manufacturing

Tzu Ming Lu
, Xujiao Gao
, Evan M. Anderson
, Juan P. Mendez
, De Anna M. Campbell
, Jeffrey A. Ivie
, Scott W. Schmucker
, Albert Grine
, Ping Lu
, Lisa A. Tracy
, Reza Arghavani
, Shashank Misra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET’s feasibility.

Original language	English
Title of host publication	2021 Silicon Nanoelectronics Workshop, SNW 2021
DOIs	https://doi.org/10.1109/SNW51795.2021.00029
State	Published - Jan 1 2021
Externally published	Yes

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10.1109/SNW51795.2021.00029

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@inproceedings{34d835144f33402ab34cfe78b25ae24c,

title = "Path towards a vertical TFET enabled by atomic precision advanced manufacturing",

abstract = "We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET{\textquoteright}s feasibility.",

author = "Lu, \{Tzu Ming\} and Xujiao Gao and Anderson, \{Evan M.\} and Mendez, \{Juan P.\} and Campbell, \{De Anna M.\} and Ivie, \{Jeffrey A.\} and Schmucker, \{Scott W.\} and Albert Grine and Ping Lu and Tracy, \{Lisa A.\} and Reza Arghavani and Shashank Misra",

year = "2021",

month = jan,

day = "1",

doi = "10.1109/SNW51795.2021.00029",

language = "English",

isbn = "9784863487819",

booktitle = "2021 Silicon Nanoelectronics Workshop, SNW 2021",

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T1 - Path towards a vertical TFET enabled by atomic precision advanced manufacturing

AU - Lu, Tzu Ming

AU - Gao, Xujiao

AU - Anderson, Evan M.

AU - Mendez, Juan P.

AU - Campbell, De Anna M.

AU - Ivie, Jeffrey A.

AU - Schmucker, Scott W.

AU - Grine, Albert

AU - Lu, Ping

AU - Tracy, Lisa A.

AU - Arghavani, Reza

AU - Misra, Shashank

PY - 2021/1/1

Y1 - 2021/1/1

N2 - We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET’s feasibility.

AB - We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET’s feasibility.

UR - https://www.scopus.com/pages/publications/85119450961

U2 - 10.1109/SNW51795.2021.00029

DO - 10.1109/SNW51795.2021.00029

M3 - Conference contribution

SN - 9784863487819

BT - 2021 Silicon Nanoelectronics Workshop, SNW 2021

ER -

Path towards a vertical TFET enabled by atomic precision advanced manufacturing

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