Photoluminescent characteristics of Ni-catalyzed GaN nanowires

Jinkyoung Yoo; Young Joon Hong; Sung Jin An; Gyu Chul Yi; Bonghwan Chon; Taiha Joo; Jong Wook Kim; Jeong Soo Lee

doi:10.1063/1.2243710

Photoluminescent characteristics of Ni-catalyzed GaN nanowires

Jinkyoung Yoo
, Young Joon Hong
, Sung Jin An
, Gyu Chul Yi
, Bonghwan Chon
, Taiha Joo
, Jong Wook Kim
, Jeong Soo Lee

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

The authors report on time-integrated and time-resolved photoluminescence (PL) of GaN nanowires grown by the Ni-catalyst-assisted vapor-liquid-solid method. From PL spectra of Ni-catalyzed GaN nanowires at 10 K, several PL peaks were observed at 3.472, 3.437, and 3.266 eV, respectively. PL peaks at 3.472 and 3.266 eV are attributed to neutral-donor-bound excitons and donor-acceptor pair, respectively. Furthermore, according to the results from temperature-dependent and time-resolved PL measurements, the origin of the PL peak at 3.437 eV is also discussed.

Original language	English
Article number	043124
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2243710
State	Published - Aug 4 2006

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@article{842654f4ef44448690a6597d443a18d5,

title = "Photoluminescent characteristics of Ni-catalyzed GaN nanowires",

abstract = "The authors report on time-integrated and time-resolved photoluminescence (PL) of GaN nanowires grown by the Ni-catalyst-assisted vapor-liquid-solid method. From PL spectra of Ni-catalyzed GaN nanowires at 10 K, several PL peaks were observed at 3.472, 3.437, and 3.266 eV, respectively. PL peaks at 3.472 and 3.266 eV are attributed to neutral-donor-bound excitons and donor-acceptor pair, respectively. Furthermore, according to the results from temperature-dependent and time-resolved PL measurements, the origin of the PL peak at 3.437 eV is also discussed.",

author = "Jinkyoung Yoo and Hong, \{Young Joon\} and An, \{Sung Jin\} and Yi, \{Gyu Chul\} and Bonghwan Chon and Taiha Joo and Kim, \{Jong Wook\} and Lee, \{Jeong Soo\}",

year = "2006",

month = aug,

day = "4",

doi = "10.1063/1.2243710",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Photoluminescent characteristics of Ni-catalyzed GaN nanowires

AU - Yoo, Jinkyoung

AU - Hong, Young Joon

AU - An, Sung Jin

AU - Yi, Gyu Chul

AU - Chon, Bonghwan

AU - Joo, Taiha

AU - Kim, Jong Wook

AU - Lee, Jeong Soo

PY - 2006/8/4

Y1 - 2006/8/4

N2 - The authors report on time-integrated and time-resolved photoluminescence (PL) of GaN nanowires grown by the Ni-catalyst-assisted vapor-liquid-solid method. From PL spectra of Ni-catalyzed GaN nanowires at 10 K, several PL peaks were observed at 3.472, 3.437, and 3.266 eV, respectively. PL peaks at 3.472 and 3.266 eV are attributed to neutral-donor-bound excitons and donor-acceptor pair, respectively. Furthermore, according to the results from temperature-dependent and time-resolved PL measurements, the origin of the PL peak at 3.437 eV is also discussed.

AB - The authors report on time-integrated and time-resolved photoluminescence (PL) of GaN nanowires grown by the Ni-catalyst-assisted vapor-liquid-solid method. From PL spectra of Ni-catalyzed GaN nanowires at 10 K, several PL peaks were observed at 3.472, 3.437, and 3.266 eV, respectively. PL peaks at 3.472 and 3.266 eV are attributed to neutral-donor-bound excitons and donor-acceptor pair, respectively. Furthermore, according to the results from temperature-dependent and time-resolved PL measurements, the origin of the PL peak at 3.437 eV is also discussed.

UR - https://www.scopus.com/pages/publications/33746627309

U2 - 10.1063/1.2243710

DO - 10.1063/1.2243710

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043124

ER -

Photoluminescent characteristics of Ni-catalyzed GaN nanowires

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