Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

M. Hofmann; N. Gerhardt; A. Wagner; W. Stolz; S. W. Koch; W. W. Rühle; J. Hader; J. V. Moloney; H. C. Schneider; W. W. Chow

Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

M. Hofmann
, N. Gerhardt
, A. Wagner
, W. Stolz
, S. W. Koch
, W. W. Rühle
, J. Hader
, J. V. Moloney
, H. C. Schneider
, W. W. Chow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.

Original language	English
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages	326-327
Number of pages	2
Volume	1
State	Published - Dec 1 2001
Externally published	Yes

Cite this

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title = "Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers",

abstract = "The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.",

author = "M. Hofmann and N. Gerhardt and A. Wagner and W. Stolz and Koch, \{S. W.\} and R{\"u}hle, \{W. W.\} and J. Hader and Moloney, \{J. V.\} and Schneider, \{H. C.\} and Chow, \{W. W.\}",

year = "2001",

month = dec,

day = "1",

language = "English",

volume = "1",

pages = "326--327",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

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TY - GEN

T1 - Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

AU - Hofmann, M.

AU - Gerhardt, N.

AU - Wagner, A.

AU - Stolz, W.

AU - Koch, S. W.

AU - Rühle, W. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Schneider, H. C.

AU - Chow, W. W.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.

AB - The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.

UR - https://www.scopus.com/pages/publications/0035656553

M3 - Conference contribution

VL - 1

SP - 326

EP - 327

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -

Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

Abstract

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