Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence

H. S. Kim; J. Y. Lin; H. X. Jiang; W. W. Chow; A. Botchkarev; H. Morkoç

Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence

H. S. Kim
, J. Y. Lin
, H. X. Jiang
, W. W. Chow
, A. Botchkarev
, H. Morkoç

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 angstrom well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 angstrom well GaN/Al0.15Ga0.85N MQWs.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Volume	537
State	Published - Dec 1 1999
Externally published	Yes

Cite this

@inproceedings{1c0559cfcb5343408a88e2a000e8441a,

title = "Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence",

abstract = "Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 angstrom well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 angstrom well GaN/Al0.15Ga0.85N MQWs.",

author = "Kim, \{H. S.\} and Lin, \{J. Y.\} and Jiang, \{H. X.\} and Chow, \{W. W.\} and A. Botchkarev and H. Morko{\c c}",

year = "1999",

month = dec,

day = "1",

language = "English",

volume = "537",

booktitle = "Materials Research Society Symposium - Proceedings",

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TY - GEN

T1 - Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence

AU - Kim, H. S.

AU - Lin, J. Y.

AU - Jiang, H. X.

AU - Chow, W. W.

AU - Botchkarev, A.

AU - Morkoç, H.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 angstrom well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 angstrom well GaN/Al0.15Ga0.85N MQWs.

AB - Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 angstrom well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 angstrom well GaN/Al0.15Ga0.85N MQWs.

UR - https://www.scopus.com/pages/publications/17644447125

M3 - Conference contribution

VL - 537

BT - Materials Research Society Symposium - Proceedings

ER -

Piezoelectric effects in GaN/AlGaN multiple quantum wells probed by picosecond time-resolved photoluminescence

Abstract

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