Polarization-pinned emission of a continuouswave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors

Saadat M. Mishkat-Ul-Masabih; Ting S. Luk; Morteza Monavarian; Daniel F. Feezell

doi:10.1364/OE.27.009495

Polarization-pinned emission of a continuouswave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors

Saadat M. Mishkat-Ul-Masabih
, Ting S. Luk
, Morteza Monavarian
, Daniel F. Feezell

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of ~5 kW/cm 2 and a FWHM of ~0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.

Original language	English
Pages (from-to)	9495-9501
Number of pages	7
Journal	Optics Express
Volume	27
Issue number	7
DOIs	https://doi.org/10.1364/OE.27.009495
State	Published - Jan 1 2019
Externally published	Yes

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@article{cbd0a82c1a4e463cbb654f92ea41763e,

title = "Polarization-pinned emission of a continuouswave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors",

abstract = "A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of \textasciitilde{}5 kW/cm 2 and a FWHM of \textasciitilde{}0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.",

author = "Mishkat-Ul-Masabih, \{Saadat M.\} and Luk, \{Ting S.\} and Morteza Monavarian and Feezell, \{Daniel F.\}",

year = "2019",

month = jan,

day = "1",

doi = "10.1364/OE.27.009495",

language = "English",

volume = "27",

pages = "9495--9501",

journal = "Optics Express",

issn = "1094-4087",

publisher = "Optica Publishing Group (formerly OSA)",

number = "7",

}

TY - JOUR

T1 - Polarization-pinned emission of a continuouswave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors

AU - Mishkat-Ul-Masabih, Saadat M.

AU - Luk, Ting S.

AU - Monavarian, Morteza

AU - Feezell, Daniel F.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of ~5 kW/cm 2 and a FWHM of ~0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.

AB - A nonpolar GaN-based vertical-cavity surface-emitting laser (VCSEL) using nanoporous bottom epitaxial distributed Bragg reflector (DBR) is demonstrated at room temperature (RT) under continuous-wave (CW) optical pumping. The porous layers enable the epitaxial growth of lattice-matched high-reflectance DBRs without sacrificing the conductive properties needed for high-performance VCSELs. The 2-λ cavity VCSEL reported here employs a hybrid design with top dielectric DBR and bottom nanoporous DBR. Single longitudinal mode lasing is observed at 462 nm with a threshold power density of ~5 kW/cm 2 and a FWHM of ~0.12 nm. The emission polarization was pinned in the a-direction at all measured locations.

UR - https://www.scopus.com/pages/publications/85064571269

U2 - 10.1364/OE.27.009495

DO - 10.1364/OE.27.009495

M3 - Article

SN - 1094-4087

VL - 27

SP - 9495

EP - 9501

JO - Optics Express

JF - Optics Express

IS - 7

ER -

Polarization-pinned emission of a continuouswave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors

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