Power Scaling in Quantum-Well Laser Amplifiers

Weng W. Chow; Richard R. Craig

doi:10.1109/3.97270

Power Scaling in Quantum-Well Laser Amplifiers

Weng W. Chow
, Richard R. Craig

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We investigated the effects of increasing excitation on the performance of quantum-well semiconductor laser amplifiers. Amplified spontaneous emission (ASE) and gain roll over at high injected carrier densities are two limitations to the power scaling of these devices. A Rigrod analysis is used to study the effects of these limitations on the gain, ratio of signal to ASE power, and efficiency for different values of injection current, facet reflectivity, and input laser intensity. Comparisons are made with an equivalent amplifier operating with a bulk semiconductor gain medium. Our analysis suggests that quantum-well semiconductor amplifier performance improves with a double-pass configuration. © 1991 IEEE

Original language	English
Pages (from-to)	2267-2273
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	27
Issue number	10
DOIs	https://doi.org/10.1109/3.97270
State	Published - Jan 1 1991
Externally published	Yes

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title = "Power Scaling in Quantum-Well Laser Amplifiers",

abstract = "We investigated the effects of increasing excitation on the performance of quantum-well semiconductor laser amplifiers. Amplified spontaneous emission (ASE) and gain roll over at high injected carrier densities are two limitations to the power scaling of these devices. A Rigrod analysis is used to study the effects of these limitations on the gain, ratio of signal to ASE power, and efficiency for different values of injection current, facet reflectivity, and input laser intensity. Comparisons are made with an equivalent amplifier operating with a bulk semiconductor gain medium. Our analysis suggests that quantum-well semiconductor amplifier performance improves with a double-pass configuration. {\textcopyright} 1991 IEEE",

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AB - We investigated the effects of increasing excitation on the performance of quantum-well semiconductor laser amplifiers. Amplified spontaneous emission (ASE) and gain roll over at high injected carrier densities are two limitations to the power scaling of these devices. A Rigrod analysis is used to study the effects of these limitations on the gain, ratio of signal to ASE power, and efficiency for different values of injection current, facet reflectivity, and input laser intensity. Comparisons are made with an equivalent amplifier operating with a bulk semiconductor gain medium. Our analysis suggests that quantum-well semiconductor amplifier performance improves with a double-pass configuration. © 1991 IEEE

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Power Scaling in Quantum-Well Laser Amplifiers

Abstract

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