Probing exciton diffusion in semiconductors using semiconductor-nanorod quantum structures

Jinkyoung Yoo; Gyu Chul Yi; Le Si Dang

doi:10.1002/smll.200701293

Probing exciton diffusion in semiconductors using semiconductor-nanorod quantum structures

Jinkyoung Yoo
, Gyu Chul Yi
, Le Si Dang

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Exciton diffusion in individual Mg_0.2Zn_0.8O nanorods was investigated by using a single quantum well (SQW) on the nanorod tip and cathodoluminescence (CL) spectroscopy. Excitons from injected carriers were diffused into the SQW along the nanorod axis, including the light emission from the SQW, and exciton diffusion was examined by monitoring CL at various electron beam spots. All CL measurements were performed at 5K on individual nanorods, using a 30 keV electron beam focused on a spot size of 50 nm. The intensity of ZnO SQW emission decreased with distance and finally disappeared at a distance of 300 nm between the electron beam spot and the SQW. ZnO buffer layer emission also acted as a luminescence probe, similar to the role of ZnO SQW emission. Diffusion in these nanorods can be limited by surface recombination, which could be explored using coaxial nanorod heterstructures.

Original language	English
Pages (from-to)	467-470
Number of pages	4
Journal	Small
Volume	4
Issue number	4
DOIs	https://doi.org/10.1002/smll.200701293
State	Published - Apr 1 2008
Externally published	Yes

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title = "Probing exciton diffusion in semiconductors using semiconductor-nanorod quantum structures",

abstract = "Exciton diffusion in individual Mg0.2Zn0.8O nanorods was investigated by using a single quantum well (SQW) on the nanorod tip and cathodoluminescence (CL) spectroscopy. Excitons from injected carriers were diffused into the SQW along the nanorod axis, including the light emission from the SQW, and exciton diffusion was examined by monitoring CL at various electron beam spots. All CL measurements were performed at 5K on individual nanorods, using a 30 keV electron beam focused on a spot size of 50 nm. The intensity of ZnO SQW emission decreased with distance and finally disappeared at a distance of 300 nm between the electron beam spot and the SQW. ZnO buffer layer emission also acted as a luminescence probe, similar to the role of ZnO SQW emission. Diffusion in these nanorods can be limited by surface recombination, which could be explored using coaxial nanorod heterstructures.",

author = "Jinkyoung Yoo and Yi, \{Gyu Chul\} and Dang, \{Le Si\}",

year = "2008",

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doi = "10.1002/smll.200701293",

language = "English",

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journal = "Small",

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T1 - Probing exciton diffusion in semiconductors using semiconductor-nanorod quantum structures

AU - Yoo, Jinkyoung

AU - Yi, Gyu Chul

AU - Dang, Le Si

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Y1 - 2008/4/1

N2 - Exciton diffusion in individual Mg0.2Zn0.8O nanorods was investigated by using a single quantum well (SQW) on the nanorod tip and cathodoluminescence (CL) spectroscopy. Excitons from injected carriers were diffused into the SQW along the nanorod axis, including the light emission from the SQW, and exciton diffusion was examined by monitoring CL at various electron beam spots. All CL measurements were performed at 5K on individual nanorods, using a 30 keV electron beam focused on a spot size of 50 nm. The intensity of ZnO SQW emission decreased with distance and finally disappeared at a distance of 300 nm between the electron beam spot and the SQW. ZnO buffer layer emission also acted as a luminescence probe, similar to the role of ZnO SQW emission. Diffusion in these nanorods can be limited by surface recombination, which could be explored using coaxial nanorod heterstructures.

AB - Exciton diffusion in individual Mg0.2Zn0.8O nanorods was investigated by using a single quantum well (SQW) on the nanorod tip and cathodoluminescence (CL) spectroscopy. Excitons from injected carriers were diffused into the SQW along the nanorod axis, including the light emission from the SQW, and exciton diffusion was examined by monitoring CL at various electron beam spots. All CL measurements were performed at 5K on individual nanorods, using a 30 keV electron beam focused on a spot size of 50 nm. The intensity of ZnO SQW emission decreased with distance and finally disappeared at a distance of 300 nm between the electron beam spot and the SQW. ZnO buffer layer emission also acted as a luminescence probe, similar to the role of ZnO SQW emission. Diffusion in these nanorods can be limited by surface recombination, which could be explored using coaxial nanorod heterstructures.

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U2 - 10.1002/smll.200701293

DO - 10.1002/smll.200701293

M3 - Article

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VL - 4

SP - 467

EP - 470

JO - Small

JF - Small

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ER -

Probing exciton diffusion in semiconductors using semiconductor-nanorod quantum structures

Abstract

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