Probing localization and mobility of an excess electron in a-Si by quantum molecular dynamics

A. Nakano; P. Vashishta; R. K. Kalia; L. H. Yang

doi:10.1103/PhysRevB.45.8363

Probing localization and mobility of an excess electron in a-Si by quantum molecular dynamics

A. Nakano
, P. Vashishta
, R. K. Kalia
, L. H. Yang

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The behavior of an excess electron in a-Si is studied over a wide temperature range using the quantum-molecular-dynamics approach. The electron is found to be localized in a nearly spherical void of radius 3, and is surrounded by a ring of eight Si atoms. The simulation results for the electron mobility are in good agreement with the time-of-flight measurements. © 1992 The American Physical Society.

Original language	English
Pages (from-to)	8363-8368
Number of pages	6
Journal	Physical Review B
Volume	45
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.45.8363
State	Published - Jan 1 1992
Externally published	Yes

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10.1103/PhysRevB.45.8363

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title = "Probing localization and mobility of an excess electron in a-Si by quantum molecular dynamics",

abstract = "The behavior of an excess electron in a-Si is studied over a wide temperature range using the quantum-molecular-dynamics approach. The electron is found to be localized in a nearly spherical void of radius 3, and is surrounded by a ring of eight Si atoms. The simulation results for the electron mobility are in good agreement with the time-of-flight measurements. {\textcopyright} 1992 The American Physical Society.",

author = "A. Nakano and P. Vashishta and Kalia, \{R. K.\} and Yang, \{L. H.\}",

year = "1992",

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doi = "10.1103/PhysRevB.45.8363",

language = "English",

volume = "45",

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journal = "Physical Review B",

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publisher = "American Institute of Physics",

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T1 - Probing localization and mobility of an excess electron in a-Si by quantum molecular dynamics

AU - Nakano, A.

AU - Vashishta, P.

AU - Kalia, R. K.

AU - Yang, L. H.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - The behavior of an excess electron in a-Si is studied over a wide temperature range using the quantum-molecular-dynamics approach. The electron is found to be localized in a nearly spherical void of radius 3, and is surrounded by a ring of eight Si atoms. The simulation results for the electron mobility are in good agreement with the time-of-flight measurements. © 1992 The American Physical Society.

AB - The behavior of an excess electron in a-Si is studied over a wide temperature range using the quantum-molecular-dynamics approach. The electron is found to be localized in a nearly spherical void of radius 3, and is surrounded by a ring of eight Si atoms. The simulation results for the electron mobility are in good agreement with the time-of-flight measurements. © 1992 The American Physical Society.

UR - https://www.scopus.com/pages/publications/33646635054

U2 - 10.1103/PhysRevB.45.8363

DO - 10.1103/PhysRevB.45.8363

M3 - Article

SN - 0163-1829

VL - 45

SP - 8363

EP - 8368

JO - Physical Review B

JF - Physical Review B

IS - 15

ER -

Probing localization and mobility of an excess electron in a-Si by quantum molecular dynamics

Abstract

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