Quantitative high resolution electron microscopy of grain boundaries

Geoffrey H. Campbell; Wayne E. King; Dov Cohen; C. Barry Carter

Quantitative high resolution electron microscopy of grain boundaries

Geoffrey H. Campbell
, Wayne E. King
, Dov Cohen
, C. Barry Carter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The Σ11 (113)/[110] symmetric tilt grain boundary has been characterized by high resolution transmission electron microscopy. The method by which the images are prepared for analysis is described. The statistics of the image data have been found to follow a normal distribution. The electron-optical imaging parameters used to acquire the image have been determined by non-linear least-square image simulation optimization within the perfect crystal region of the micrograph. A similar image simulation optimization procedure is used to determine the atom positions which provide the best match between the experimental image and the image simulation.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	119-124
Number of pages	6
Volume	466
State	Published - Jan 1 1997
Externally published	Yes

Cite this

@inproceedings{f055c74041974764a8515bc44005f01c,

title = "Quantitative high resolution electron microscopy of grain boundaries",

abstract = "The Σ11 (113)/[110] symmetric tilt grain boundary has been characterized by high resolution transmission electron microscopy. The method by which the images are prepared for analysis is described. The statistics of the image data have been found to follow a normal distribution. The electron-optical imaging parameters used to acquire the image have been determined by non-linear least-square image simulation optimization within the perfect crystal region of the micrograph. A similar image simulation optimization procedure is used to determine the atom positions which provide the best match between the experimental image and the image simulation.",

author = "Campbell, \{Geoffrey H.\} and King, \{Wayne E.\} and Dov Cohen and Carter, \{C. Barry\}",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "466",

pages = "119--124",

booktitle = "Materials Research Society Symposium - Proceedings",

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TY - GEN

T1 - Quantitative high resolution electron microscopy of grain boundaries

AU - Campbell, Geoffrey H.

AU - King, Wayne E.

AU - Cohen, Dov

AU - Carter, C. Barry

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The Σ11 (113)/[110] symmetric tilt grain boundary has been characterized by high resolution transmission electron microscopy. The method by which the images are prepared for analysis is described. The statistics of the image data have been found to follow a normal distribution. The electron-optical imaging parameters used to acquire the image have been determined by non-linear least-square image simulation optimization within the perfect crystal region of the micrograph. A similar image simulation optimization procedure is used to determine the atom positions which provide the best match between the experimental image and the image simulation.

AB - The Σ11 (113)/[110] symmetric tilt grain boundary has been characterized by high resolution transmission electron microscopy. The method by which the images are prepared for analysis is described. The statistics of the image data have been found to follow a normal distribution. The electron-optical imaging parameters used to acquire the image have been determined by non-linear least-square image simulation optimization within the perfect crystal region of the micrograph. A similar image simulation optimization procedure is used to determine the atom positions which provide the best match between the experimental image and the image simulation.

UR - https://www.scopus.com/pages/publications/0030691454

M3 - Conference contribution

VL - 466

SP - 119

EP - 124

BT - Materials Research Society Symposium - Proceedings

ER -

Quantitative high resolution electron microscopy of grain boundaries

Abstract

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