Abstract
Heteroepitaxially grown InAs quantum dot lasers were demonstrated on (001) Si under continuous-wave optical pumping with low thresholds (down to 35 μW). The feasibility of integrating active and passive devices through electrical injection was analyzed.
| Original language | English |
|---|---|
| Title of host publication | Optics InfoBase Conference Papers |
| Volume | Part F40-OFC 2017 |
| DOIs | |
| State | Published - Jan 1 2017 |
| Externally published | Yes |
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