Quantum transport in Si:P δ-layer wires

Juan P. Mendez; Denis Mamaluy; Xujiao Gao; Evan M. Anderson; Deanna M. Campbell; Jeffrey A. Ivie; Tzu Ming Lu; Scott W. Schmucker; Shashank Misra

doi:10.23919/SISPAD49475.2020.9241610

Quantum transport in Si:P δ-layer wires

Juan P. Mendez
, Denis Mamaluy
, Xujiao Gao
, Evan M. Anderson
, Deanna M. Campbell
, Jeffrey A. Ivie
, Tzu Ming Lu
, Scott W. Schmucker
, Shashank Misra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P δ-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the δ-layer donor densities.

Original language	English
Title of host publication	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages	181-184
Number of pages	4
Volume	2020-September
DOIs	https://doi.org/10.23919/SISPAD49475.2020.9241610
State	Published - Sep 23 2020
Externally published	Yes

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10.23919/SISPAD49475.2020.9241610

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@inproceedings{60da3b33831b446992b3ceebf612816b,

title = "Quantum transport in Si:P δ-layer wires",

abstract = "We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P δ-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the δ-layer donor densities.",

author = "Mendez, \{Juan P.\} and Denis Mamaluy and Xujiao Gao and Anderson, \{Evan M.\} and Campbell, \{Deanna M.\} and Ivie, \{Jeffrey A.\} and Lu, \{Tzu Ming\} and Schmucker, \{Scott W.\} and Shashank Misra",

year = "2020",

month = sep,

day = "23",

doi = "10.23919/SISPAD49475.2020.9241610",

language = "English",

isbn = "9784863487635",

volume = "2020-September",

pages = "181--184",

booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

}

TY - GEN

T1 - Quantum transport in Si:P δ-layer wires

AU - Mendez, Juan P.

AU - Mamaluy, Denis

AU - Gao, Xujiao

AU - Anderson, Evan M.

AU - Campbell, Deanna M.

AU - Ivie, Jeffrey A.

AU - Lu, Tzu Ming

AU - Schmucker, Scott W.

AU - Misra, Shashank

PY - 2020/9/23

Y1 - 2020/9/23

N2 - We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P δ-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the δ-layer donor densities.

AB - We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P δ-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the δ-layer donor densities.

UR - https://www.scopus.com/pages/publications/85096241949

U2 - 10.23919/SISPAD49475.2020.9241610

DO - 10.23919/SISPAD49475.2020.9241610

M3 - Conference contribution

SN - 9784863487635

VL - 2020-September

SP - 181

EP - 184

BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ER -

Quantum transport in Si:P δ-layer wires

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