Quantum-well width dependence of threshold current density in InGaN lasers

W. W. Chow; H. Amano; T. Takeuchi; J. Han

doi:10.1063/1.124336

Quantum-well width dependence of threshold current density in InGaN lasers

W. W. Chow
, H. Amano
, T. Takeuchi
, J. Han

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

The quantum well width dependence analysis in InGaN quantum well lasers was based on a microscopic theory where band structure and many-body Coulomb effects are treated consistently. A quantum-well width dependence of the threshold current density was found due to the quantum-confined Stark effect. Calculations show that the reduced dipole matrix element in the wide quantum well benefits laser operation.

Original language	English
Pages (from-to)	244-246
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	2
DOIs	https://doi.org/10.1063/1.124336
State	Published - Jul 12 1999
Externally published	Yes

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title = "Quantum-well width dependence of threshold current density in InGaN lasers",

abstract = "The quantum well width dependence analysis in InGaN quantum well lasers was based on a microscopic theory where band structure and many-body Coulomb effects are treated consistently. A quantum-well width dependence of the threshold current density was found due to the quantum-confined Stark effect. Calculations show that the reduced dipole matrix element in the wide quantum well benefits laser operation.",

author = "Chow, \{W. W.\} and H. Amano and T. Takeuchi and J. Han",

year = "1999",

month = jul,

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doi = "10.1063/1.124336",

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pages = "244--246",

journal = "Applied Physics Letters",

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T1 - Quantum-well width dependence of threshold current density in InGaN lasers

AU - Chow, W. W.

AU - Amano, H.

AU - Takeuchi, T.

AU - Han, J.

PY - 1999/7/12

Y1 - 1999/7/12

N2 - The quantum well width dependence analysis in InGaN quantum well lasers was based on a microscopic theory where band structure and many-body Coulomb effects are treated consistently. A quantum-well width dependence of the threshold current density was found due to the quantum-confined Stark effect. Calculations show that the reduced dipole matrix element in the wide quantum well benefits laser operation.

AB - The quantum well width dependence analysis in InGaN quantum well lasers was based on a microscopic theory where band structure and many-body Coulomb effects are treated consistently. A quantum-well width dependence of the threshold current density was found due to the quantum-confined Stark effect. Calculations show that the reduced dipole matrix element in the wide quantum well benefits laser operation.

UR - https://www.scopus.com/pages/publications/0032622031

U2 - 10.1063/1.124336

DO - 10.1063/1.124336

M3 - Article

SN - 0003-6951

VL - 75

SP - 244

EP - 246

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Quantum-well width dependence of threshold current density in InGaN lasers

Abstract

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