Radiation-induced resistance changes in TaO<inf>x</inf> and TiO<inf>2</inf> memristors

D. R. Hughart; A. J. Lohn; P. R. Mickel; P. E. Dodd; M. R. Shaneyfelt; A. I. Silva; E. Bielejec; G. Vizkelethy; B. L. Doyle; M. T. Marshall; M. L. McLain; M. J. Marinella; S. M. Dalton

doi:10.1109/AERO.2014.6836465

Radiation-induced resistance changes in TaO<inf>x</inf> and TiO<inf>2</inf> memristors

D. R. Hughart
, A. J. Lohn
, P. R. Mickel
, P. E. Dodd
, M. R. Shaneyfelt
, A. I. Silva
, E. Bielejec
, G. Vizkelethy
, B. L. Doyle
, M. T. Marshall
, M. L. McLain
, M. J. Marinella
, S. M. Dalton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Scopus citations

Abstract

TaOx and TiO2 memristors have been irradiated with 800 keV Ta ions, 28 MeV Si ions, and 10 keV X-rays. TaOx devices were also irradiated with 70 keV electrons. Displacement damage effects are studied using 800 keV Ta ions and both technologies show changes in resistance for fluences greater than 1010 cm-2. TaOx devices show gradual resistance degradation in the off-state with increasing fluence. TiO2 devices show gradual inconsistent increases in off-state resistance with inconsistent abrupt decreases. TaOx devices show more stability and consistent off-state resistances than TiO2 devices. Ionization effects are investigated using 28 MeV Si ions, 70 keV electrons, and 10 keV X-rays. During 28 MeV Si irradiation, both technologies change from the off-state to the on-state when a critical ionizing dose is reached without applying voltage or current to the device. The critical threshold is calculated using SRIM to be on the order of 60 Mrad(Si) or higher. 10 keV X-ray irradiation of doses up to 18 Mrad(Si) per step show little effect on either technology. A single TaOx device irradiated with 70 keV electrons changed from the offstate to the on-state at a calculated dose on the order of 100 krad(Si), suggesting a difference in charge yield compared to the 28 MeV Si irradiation. © 2014 IEEE.

Original language	English
Title of host publication	IEEE Aerospace Conference Proceedings
DOIs	https://doi.org/10.1109/AERO.2014.6836465
State	Published - Jan 1 2014
Externally published	Yes

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Hughart, D. R., Lohn, A. J., Mickel, P. R., Dodd, P. E., Shaneyfelt, M. R., Silva, A. I., Bielejec, E., Vizkelethy, G., Doyle, B. L., Marshall, M. T., McLain, M. L., Marinella, M. J., & Dalton, S. M. (2014). Radiation-induced resistance changes in TaO<inf>x</inf> and TiO<inf>2</inf> memristors. In IEEE Aerospace Conference Proceedings https://doi.org/10.1109/AERO.2014.6836465

@inproceedings{15d7a1fb61f948aa8ebf50e28cf08906,

title = "Radiation-induced resistance changes in TaOx and TiO2 memristors",

abstract = "TaOx and TiO2 memristors have been irradiated with 800 keV Ta ions, 28 MeV Si ions, and 10 keV X-rays. TaOx devices were also irradiated with 70 keV electrons. Displacement damage effects are studied using 800 keV Ta ions and both technologies show changes in resistance for fluences greater than 1010 cm-2. TaOx devices show gradual resistance degradation in the off-state with increasing fluence. TiO2 devices show gradual inconsistent increases in off-state resistance with inconsistent abrupt decreases. TaOx devices show more stability and consistent off-state resistances than TiO2 devices. Ionization effects are investigated using 28 MeV Si ions, 70 keV electrons, and 10 keV X-rays. During 28 MeV Si irradiation, both technologies change from the off-state to the on-state when a critical ionizing dose is reached without applying voltage or current to the device. The critical threshold is calculated using SRIM to be on the order of 60 Mrad(Si) or higher. 10 keV X-ray irradiation of doses up to 18 Mrad(Si) per step show little effect on either technology. A single TaOx device irradiated with 70 keV electrons changed from the offstate to the on-state at a calculated dose on the order of 100 krad(Si), suggesting a difference in charge yield compared to the 28 MeV Si irradiation. {\textcopyright} 2014 IEEE.",

author = "Hughart, \{D. R.\} and Lohn, \{A. J.\} and Mickel, \{P. R.\} and Dodd, \{P. E.\} and Shaneyfelt, \{M. R.\} and Silva, \{A. I.\} and E. Bielejec and G. Vizkelethy and Doyle, \{B. L.\} and Marshall, \{M. T.\} and McLain, \{M. L.\} and Marinella, \{M. J.\} and Dalton, \{S. M.\}",

year = "2014",

month = jan,

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doi = "10.1109/AERO.2014.6836465",

language = "English",

isbn = "9781479916221",

booktitle = "IEEE Aerospace Conference Proceedings",

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TY - GEN

T1 - Radiation-induced resistance changes in TaOx and TiO2 memristors

AU - Hughart, D. R.

AU - Lohn, A. J.

AU - Mickel, P. R.

AU - Dodd, P. E.

AU - Shaneyfelt, M. R.

AU - Silva, A. I.

AU - Bielejec, E.

AU - Vizkelethy, G.

AU - Doyle, B. L.

AU - Marshall, M. T.

AU - McLain, M. L.

AU - Marinella, M. J.

AU - Dalton, S. M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - TaOx and TiO2 memristors have been irradiated with 800 keV Ta ions, 28 MeV Si ions, and 10 keV X-rays. TaOx devices were also irradiated with 70 keV electrons. Displacement damage effects are studied using 800 keV Ta ions and both technologies show changes in resistance for fluences greater than 1010 cm-2. TaOx devices show gradual resistance degradation in the off-state with increasing fluence. TiO2 devices show gradual inconsistent increases in off-state resistance with inconsistent abrupt decreases. TaOx devices show more stability and consistent off-state resistances than TiO2 devices. Ionization effects are investigated using 28 MeV Si ions, 70 keV electrons, and 10 keV X-rays. During 28 MeV Si irradiation, both technologies change from the off-state to the on-state when a critical ionizing dose is reached without applying voltage or current to the device. The critical threshold is calculated using SRIM to be on the order of 60 Mrad(Si) or higher. 10 keV X-ray irradiation of doses up to 18 Mrad(Si) per step show little effect on either technology. A single TaOx device irradiated with 70 keV electrons changed from the offstate to the on-state at a calculated dose on the order of 100 krad(Si), suggesting a difference in charge yield compared to the 28 MeV Si irradiation. © 2014 IEEE.

AB - TaOx and TiO2 memristors have been irradiated with 800 keV Ta ions, 28 MeV Si ions, and 10 keV X-rays. TaOx devices were also irradiated with 70 keV electrons. Displacement damage effects are studied using 800 keV Ta ions and both technologies show changes in resistance for fluences greater than 1010 cm-2. TaOx devices show gradual resistance degradation in the off-state with increasing fluence. TiO2 devices show gradual inconsistent increases in off-state resistance with inconsistent abrupt decreases. TaOx devices show more stability and consistent off-state resistances than TiO2 devices. Ionization effects are investigated using 28 MeV Si ions, 70 keV electrons, and 10 keV X-rays. During 28 MeV Si irradiation, both technologies change from the off-state to the on-state when a critical ionizing dose is reached without applying voltage or current to the device. The critical threshold is calculated using SRIM to be on the order of 60 Mrad(Si) or higher. 10 keV X-ray irradiation of doses up to 18 Mrad(Si) per step show little effect on either technology. A single TaOx device irradiated with 70 keV electrons changed from the offstate to the on-state at a calculated dose on the order of 100 krad(Si), suggesting a difference in charge yield compared to the 28 MeV Si irradiation. © 2014 IEEE.

UR - https://www.scopus.com/pages/publications/84903974041

U2 - 10.1109/AERO.2014.6836465

DO - 10.1109/AERO.2014.6836465

M3 - Conference contribution

SN - 9781479916221

BT - IEEE Aerospace Conference Proceedings

ER -

Radiation-induced resistance changes in TaO<inf>x</inf> and TiO<inf>2</inf> memristors

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