Abstract
We will overview the challenges and performance of AlGaN-based multi-quantum well LEDs in the 275-290 nm range. Recent progress in materials and device development has enabled output powers of > 1 mW at 290 nm. © 1999 Optical Society of America.
| Original language | English |
|---|---|
| Title of host publication | OSA Trends in Optics and Photonics Series |
| Pages | 1611-1612 |
| Number of pages | 2 |
| Volume | 96 A |
| State | Published - Jan 1 2004 |
| Externally published | Yes |
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