Reducing internal field effects with high aluminum AlGaN quantum wells

W. W. Chow; S. Wieczorek; A. J. Fischer; M. H. Crawford; A. A. Allerman; S. R. Lee

Reducing internal field effects with high aluminum AlGaN quantum wells

W. W. Chow
, S. Wieczorek
, A. J. Fischer
, M. H. Crawford
, A. A. Allerman
, S. R. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells. © 2004 IEEE.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Pages	89-90
Number of pages	2
State	Published - Dec 1 2004
Externally published	Yes

Cite this

@inproceedings{070760c7d5714fc096b6b960c001ce65,

title = "Reducing internal field effects with high aluminum AlGaN quantum wells",

abstract = "Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells. {\textcopyright} 2004 IEEE.",

author = "Chow, \{W. W.\} and S. Wieczorek and Fischer, \{A. J.\} and Crawford, \{M. H.\} and Allerman, \{A. A.\} and Lee, \{S. R.\}",

year = "2004",

month = dec,

day = "1",

language = "English",

pages = "89--90",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

}

TY - GEN

T1 - Reducing internal field effects with high aluminum AlGaN quantum wells

AU - Chow, W. W.

AU - Wieczorek, S.

AU - Fischer, A. J.

AU - Crawford, M. H.

AU - Allerman, A. A.

AU - Lee, S. R.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells. © 2004 IEEE.

AB - Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells. © 2004 IEEE.

UR - https://www.scopus.com/pages/publications/17044366152

M3 - Conference contribution

SP - 89

EP - 90

BT - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

Reducing internal field effects with high aluminum AlGaN quantum wells

Abstract

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