Reflection electron microscopy of epilayers grown by molecular beam epitaxy

B. C. De Cooman; K. H. Kuesters; C. B. Carter; Tung Hsu; G. Wicks

doi:10.1080/01418618408237542

Reflection electron microscopy of epilayers grown by molecular beam epitaxy

B. C. De Cooman
, K. H. Kuesters
, C. B. Carter
, Tung Hsu
, G. Wicks

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Reflection electron microscopy has been used lo obtain surface images of interfaces in epilayers grown by molecular beam epitaxy (MBE). The image contrast arises from differences in structure factors for the surface reflections used in the imaging. The technique is potentially a powerful tool for the study of semiconductor devices grown by MBE, by metal organic chemical vapour deposition, and by liquid-phase epitaxy as it yields cross-sectional images of cleavage planes. © 1984 Taylor & Francis Group, LLC.

Original language	English
Pages (from-to)	849-856
Number of pages	8
Journal	Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume	50
Issue number	6
DOIs	https://doi.org/10.1080/01418618408237542
State	Published - Jan 1 1984
Externally published	Yes

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@article{48f2bf7b7e384b46b09cc792ad013aa0,

title = "Reflection electron microscopy of epilayers grown by molecular beam epitaxy",

abstract = "Reflection electron microscopy has been used lo obtain surface images of interfaces in epilayers grown by molecular beam epitaxy (MBE). The image contrast arises from differences in structure factors for the surface reflections used in the imaging. The technique is potentially a powerful tool for the study of semiconductor devices grown by MBE, by metal organic chemical vapour deposition, and by liquid-phase epitaxy as it yields cross-sectional images of cleavage planes. {\textcopyright} 1984 Taylor \& Francis Group, LLC.",

author = "\{De Cooman\}, \{B. C.\} and Kuesters, \{K. H.\} and Carter, \{C. B.\} and Tung Hsu and G. Wicks",

year = "1984",

month = jan,

day = "1",

doi = "10.1080/01418618408237542",

language = "English",

volume = "50",

pages = "849--856",

journal = "Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties",

issn = "0141-8610",

publisher = "Taylor and Francis Ltd.",

number = "6",

}

TY - JOUR

T1 - Reflection electron microscopy of epilayers grown by molecular beam epitaxy

AU - De Cooman, B. C.

AU - Kuesters, K. H.

AU - Carter, C. B.

AU - Hsu, Tung

AU - Wicks, G.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - Reflection electron microscopy has been used lo obtain surface images of interfaces in epilayers grown by molecular beam epitaxy (MBE). The image contrast arises from differences in structure factors for the surface reflections used in the imaging. The technique is potentially a powerful tool for the study of semiconductor devices grown by MBE, by metal organic chemical vapour deposition, and by liquid-phase epitaxy as it yields cross-sectional images of cleavage planes. © 1984 Taylor & Francis Group, LLC.

AB - Reflection electron microscopy has been used lo obtain surface images of interfaces in epilayers grown by molecular beam epitaxy (MBE). The image contrast arises from differences in structure factors for the surface reflections used in the imaging. The technique is potentially a powerful tool for the study of semiconductor devices grown by MBE, by metal organic chemical vapour deposition, and by liquid-phase epitaxy as it yields cross-sectional images of cleavage planes. © 1984 Taylor & Francis Group, LLC.

UR - https://www.scopus.com/pages/publications/0021624758

U2 - 10.1080/01418618408237542

DO - 10.1080/01418618408237542

M3 - Article

SN - 0141-8610

VL - 50

SP - 849

EP - 856

JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

IS - 6

ER -

Reflection electron microscopy of epilayers grown by molecular beam epitaxy

Abstract

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