Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

M. P. Lilly; J. L. Reno; J. A. Simmons; I. B. Spielman; J. P. Eisenstein; L. N. Pfeiffer; K. W. West; E. H. Hwang; S. Das Sarma

doi:10.1103/PhysRevLett.90.056806

Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

M. P. Lilly
, J. L. Reno
, J. A. Simmons
, I. B. Spielman
, J. P. Eisenstein
, L. N. Pfeiffer
, K. W. West
, E. H. Hwang
, S. Das Sarma

Research output: Contribution to journal › Article › peer-review

Abstract

We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured. © 2003 The American Physical Society.

Original language	English
Pages (from-to)	4
Number of pages	1
Journal	Physical Review Letters
Volume	90
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.90.056806
State	Published - Jan 1 2003
Externally published	Yes

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title = "Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure",

abstract = "We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured. {\textcopyright} 2003 The American Physical Society.",

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T1 - Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

AU - Lilly, M. P.

AU - Reno, J. L.

AU - Simmons, J. A.

AU - Spielman, I. B.

AU - Eisenstein, J. P.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Hwang, E. H.

AU - Das Sarma, S.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured. © 2003 The American Physical Society.

AB - We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped [Formula presented] heterojunction in a gated field-effect transistor geometry, a wide range of densities, [Formula presented] to [Formula presented], are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured. © 2003 The American Physical Society.

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DO - 10.1103/PhysRevLett.90.056806

M3 - Article

SN - 0031-9007

VL - 90

SP - 4

JO - Physical Review Letters

JF - Physical Review Letters

IS - 5

ER -

Resistivity of Dilute 2D Electrons in an Undoped GaAs Heterostructure

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