Abstract
iBeam Materials has demonstrated a new technology to fabricate GaN devices directly on polycrystaline metal foil. This new technology is based on ion-beam crystal alignment to make templates for epitaxial GaN films on flexible metal foil. Thus far iBeam has demonstrated high-quality epi-GaN and GaN-based LEDs and HEMT devices on up to 4-inch scale. However, our approach will eliminate the traditional restrictions for manufacturing in wafers, allowing for scaled-up roll-to-roll processing and opening up possibilities for new classes of products in lighting, signage, displays and instrumentation. These products will be enabled by the ability to make large-area flexible sheets of GaN at low cost. In particular, sheets of LEDs produced by roll-to-roll manufacturing, will allow for large-area monolithic integration of LEDs and active transistor devices for display applications. MicroLED displays made on robust sheets of thin metal foil will enable super-bright, power-efficient, paper-thin and flexible displays.
| Original language | English |
|---|---|
| Pages | 275-277 |
| Number of pages | 3 |
| State | Published - 2022 |
| Externally published | Yes |
| Event | 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 - Duration: Jan 1 2022 → … |
Conference
| Conference | 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 |
|---|---|
| Period | 01/1/22 → … |
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