Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si (001)

Y. W. Mo; R. Kariotis; B. S. Swartzentruber; M. B. Webb; M. G. Lagally

doi:10.1116/1.577066

Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si (001)

Y. W. Mo
, R. Kariotis
, B. S. Swartzentruber
, M. B. Webb
, M. G. Lagally

Research output: Contribution to journal › Article › peer-review

157 Scopus citations

Abstract

The growth, diffusion, and coarsening of Si on Si (001) have been investigated with scanning tunneling microscopy (STM). A diffusion coefficient for Si has been determined. Anisotropy in the island shapes during epitaxy is shown to be principally a growth structure due to an anisotropic accommodation coefficient. Diffusional anisotropy is small. An ordered “diluted-dimer” structure is observed at low coverages and temperatures. © 1990, American Vacuum Society. All rights reserved.

Original language	English
Pages (from-to)	201-206
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	8
Issue number	1
DOIs	https://doi.org/10.1116/1.577066
State	Published - Jan 1 1990
Externally published	Yes

Access to Document

10.1116/1.577066

Cite this

@article{88ef8b9215124265b63446d32f64b188,

title = "Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si (001)",

abstract = "The growth, diffusion, and coarsening of Si on Si (001) have been investigated with scanning tunneling microscopy (STM). A diffusion coefficient for Si has been determined. Anisotropy in the island shapes during epitaxy is shown to be principally a growth structure due to an anisotropic accommodation coefficient. Diffusional anisotropy is small. An ordered “diluted-dimer” structure is observed at low coverages and temperatures. {\textcopyright} 1990, American Vacuum Society. All rights reserved.",

author = "Mo, \{Y. W.\} and R. Kariotis and Swartzentruber, \{B. S.\} and Webb, \{M. B.\} and Lagally, \{M. G.\}",

year = "1990",

month = jan,

day = "1",

doi = "10.1116/1.577066",

language = "English",

volume = "8",

pages = "201--206",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si (001)

AU - Mo, Y. W.

AU - Kariotis, R.

AU - Swartzentruber, B. S.

AU - Webb, M. B.

AU - Lagally, M. G.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - The growth, diffusion, and coarsening of Si on Si (001) have been investigated with scanning tunneling microscopy (STM). A diffusion coefficient for Si has been determined. Anisotropy in the island shapes during epitaxy is shown to be principally a growth structure due to an anisotropic accommodation coefficient. Diffusional anisotropy is small. An ordered “diluted-dimer” structure is observed at low coverages and temperatures. © 1990, American Vacuum Society. All rights reserved.

AB - The growth, diffusion, and coarsening of Si on Si (001) have been investigated with scanning tunneling microscopy (STM). A diffusion coefficient for Si has been determined. Anisotropy in the island shapes during epitaxy is shown to be principally a growth structure due to an anisotropic accommodation coefficient. Diffusional anisotropy is small. An ordered “diluted-dimer” structure is observed at low coverages and temperatures. © 1990, American Vacuum Society. All rights reserved.

UR - https://www.scopus.com/pages/publications/84918182707

U2 - 10.1116/1.577066

DO - 10.1116/1.577066

M3 - Article

SN - 0734-2101

VL - 8

SP - 201

EP - 206

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 1

ER -

Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si (001)

Abstract

Access to Document

Fingerprint

Cite this