Screening of piezoelectric fields in InGaN quantum well laser structures

Iain H. Brown; Peter Blood; Peter M. Smowton; John D. Thomson; Santiago M. Olaizola; A. Mark Fox; Peter J. Parbrook; Weng W. Chow

doi:10.1109/islc.2006.1708096

Screening of piezoelectric fields in InGaN quantum well laser structures

Iain H. Brown
, Peter Blood
, Peter M. Smowton
, John D. Thomson
, Santiago M. Olaizola
, A. Mark Fox
, Peter J. Parbrook
, Weng W. Chow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

By modelling time resolved emission spectra of 3 and 4 nm In 0.07Ga0.93N quantum wells we show that injected carriers reduce the internal field to only 70% of its unscreened value at typical laser thresholds. © 2006 IEEE.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Pages	81-82
Number of pages	2
DOIs	https://doi.org/10.1109/islc.2006.1708096
State	Published - Jan 1 2006
Externally published	Yes

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10.1109/islc.2006.1708096

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@inproceedings{760c3e24f44144729252b6f331c6bc64,

title = "Screening of piezoelectric fields in InGaN quantum well laser structures",

abstract = "By modelling time resolved emission spectra of 3 and 4 nm In 0.07Ga0.93N quantum wells we show that injected carriers reduce the internal field to only 70\% of its unscreened value at typical laser thresholds. {\textcopyright} 2006 IEEE.",

author = "Brown, \{Iain H.\} and Peter Blood and Smowton, \{Peter M.\} and Thomson, \{John D.\} and Olaizola, \{Santiago M.\} and Fox, \{A. Mark\} and Parbrook, \{Peter J.\} and Chow, \{Weng W.\}",

year = "2006",

month = jan,

day = "1",

doi = "10.1109/islc.2006.1708096",

language = "English",

isbn = "0780395603",

pages = "81--82",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

}

TY - GEN

T1 - Screening of piezoelectric fields in InGaN quantum well laser structures

AU - Brown, Iain H.

AU - Blood, Peter

AU - Smowton, Peter M.

AU - Thomson, John D.

AU - Olaizola, Santiago M.

AU - Fox, A. Mark

AU - Parbrook, Peter J.

AU - Chow, Weng W.

PY - 2006/1/1

Y1 - 2006/1/1

N2 - By modelling time resolved emission spectra of 3 and 4 nm In 0.07Ga0.93N quantum wells we show that injected carriers reduce the internal field to only 70% of its unscreened value at typical laser thresholds. © 2006 IEEE.

AB - By modelling time resolved emission spectra of 3 and 4 nm In 0.07Ga0.93N quantum wells we show that injected carriers reduce the internal field to only 70% of its unscreened value at typical laser thresholds. © 2006 IEEE.

UR - https://www.scopus.com/pages/publications/41549093751

U2 - 10.1109/islc.2006.1708096

DO - 10.1109/islc.2006.1708096

M3 - Conference contribution

SN - 0780395603

SN - 9780780395602

SP - 81

EP - 82

BT - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

Screening of piezoelectric fields in InGaN quantum well laser structures

Abstract

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