Self-Heating and Failure in Scalable Graphene Devices

Thomas E. Beechem; Ryan A. Shaffer; John Nogan; Taisuke Ohta; Allister B. Hamilton; Anthony E. McDonald; Stephen W. Howell

doi:10.1038/srep26457

Self-Heating and Failure in Scalable Graphene Devices

Thomas E. Beechem
, Ryan A. Shaffer
, John Nogan
, Taisuke Ohta
, Allister B. Hamilton
, Anthony E. McDonald
, Stephen W. Howell

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

Original language	English
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep26457
State	Published - Jun 9 2016
Externally published	Yes

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abstract = "Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.",

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AU - Beechem, Thomas E.

AU - Shaffer, Ryan A.

AU - Nogan, John

AU - Ohta, Taisuke

AU - Hamilton, Allister B.

AU - McDonald, Anthony E.

AU - Howell, Stephen W.

PY - 2016/6/9

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N2 - Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

AB - Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

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M3 - Article

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

ER -

Self-Heating and Failure in Scalable Graphene Devices

Abstract

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