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Simulation of many-electron correlations in a resonant-tunneling diode

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Abstract

We study the tunneling-current characteristics of a double-barrier resonant-tunneling diode connected to an electron reservoir. The dynamics of electrons in the reservoir is treated explicitly in the framework of the time-dependent density-functional theory. It is found that Coulomb correlations give rise to plasmon-assisted tunneling. © 1991 The American Physical Society.
Original languageEnglish
Pages (from-to)9066-9069
Number of pages4
JournalPhysical Review B
Volume43
Issue number11
DOIs
StatePublished - Jan 1 1991
Externally publishedYes

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