Simulation of recoil proton spectra and hydrogen depth profiles in amorphous silicon films

Changgeng Liao; Yongqiang Wang; Shengsheng Yang; Hui Jiang; Zhihao Zheng

doi:10.1016/0168-583X(93)95393-J

Simulation of recoil proton spectra and hydrogen depth profiles in amorphous silicon films

Changgeng Liao
, Yongqiang Wang
, Shengsheng Yang
, Hui Jiang
, Zhihao Zheng

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A convolution method of simulating recoil proton spectra, when measuring the hydrogen depth profiles by the elastic recoil detection analysis (ERDA), has been described [Y.Q. Wang et al., Nucl Instr. and Meth. B47 (1990) 427]. The method has been used to predict, correctly, the hydrogen distribution in a standard 40 keV proton implanted silicon. In this paper, we describe the hydrogen depth profiles in a-SiH/a-Si_2-xC_x:H(B) films, prepared by rf glow discharge at substrate temperatures T_s = 150, 200, 250, and 300°C, as determined by this method. The results show that the hydrogen concentration and its distribution have optimum values at T_s = 250°C for both a-Si:H and a-Si_2-xC_x:H(B) sublayers. This behavior of the hydrogen depth profile versus the substrate temperature can explain the characteristic of the ratio of photo- and dark-conductivity of the films versus substrate temperature.

Original language	English
Pages (from-to)	478-482
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	79
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(93)95393-J
State	Published - Jun 2 1993
Externally published	Yes

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title = "Simulation of recoil proton spectra and hydrogen depth profiles in amorphous silicon films",

abstract = "A convolution method of simulating recoil proton spectra, when measuring the hydrogen depth profiles by the elastic recoil detection analysis (ERDA), has been described [Y.Q. Wang et al., Nucl Instr. and Meth. B47 (1990) 427]. The method has been used to predict, correctly, the hydrogen distribution in a standard 40 keV proton implanted silicon. In this paper, we describe the hydrogen depth profiles in a-SiH/a-Si2-xCx:H(B) films, prepared by rf glow discharge at substrate temperatures Ts = 150, 200, 250, and 300°C, as determined by this method. The results show that the hydrogen concentration and its distribution have optimum values at Ts = 250°C for both a-Si:H and a-Si2-xCx:H(B) sublayers. This behavior of the hydrogen depth profile versus the substrate temperature can explain the characteristic of the ratio of photo- and dark-conductivity of the films versus substrate temperature.",

author = "Changgeng Liao and Yongqiang Wang and Shengsheng Yang and Hui Jiang and Zhihao Zheng",

year = "1993",

month = jun,

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doi = "10.1016/0168-583X(93)95393-J",

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volume = "79",

pages = "478--482",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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Simulation of recoil proton spectra and hydrogen depth profiles in amorphous silicon films. / Liao, Changgeng; Wang, Yongqiang; Yang, Shengsheng et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 79, No. 1-4, 02.06.1993, p. 478-482.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Simulation of recoil proton spectra and hydrogen depth profiles in amorphous silicon films

AU - Liao, Changgeng

AU - Wang, Yongqiang

AU - Yang, Shengsheng

AU - Jiang, Hui

AU - Zheng, Zhihao

PY - 1993/6/2

Y1 - 1993/6/2

N2 - A convolution method of simulating recoil proton spectra, when measuring the hydrogen depth profiles by the elastic recoil detection analysis (ERDA), has been described [Y.Q. Wang et al., Nucl Instr. and Meth. B47 (1990) 427]. The method has been used to predict, correctly, the hydrogen distribution in a standard 40 keV proton implanted silicon. In this paper, we describe the hydrogen depth profiles in a-SiH/a-Si2-xCx:H(B) films, prepared by rf glow discharge at substrate temperatures Ts = 150, 200, 250, and 300°C, as determined by this method. The results show that the hydrogen concentration and its distribution have optimum values at Ts = 250°C for both a-Si:H and a-Si2-xCx:H(B) sublayers. This behavior of the hydrogen depth profile versus the substrate temperature can explain the characteristic of the ratio of photo- and dark-conductivity of the films versus substrate temperature.

AB - A convolution method of simulating recoil proton spectra, when measuring the hydrogen depth profiles by the elastic recoil detection analysis (ERDA), has been described [Y.Q. Wang et al., Nucl Instr. and Meth. B47 (1990) 427]. The method has been used to predict, correctly, the hydrogen distribution in a standard 40 keV proton implanted silicon. In this paper, we describe the hydrogen depth profiles in a-SiH/a-Si2-xCx:H(B) films, prepared by rf glow discharge at substrate temperatures Ts = 150, 200, 250, and 300°C, as determined by this method. The results show that the hydrogen concentration and its distribution have optimum values at Ts = 250°C for both a-Si:H and a-Si2-xCx:H(B) sublayers. This behavior of the hydrogen depth profile versus the substrate temperature can explain the characteristic of the ratio of photo- and dark-conductivity of the films versus substrate temperature.

UR - https://www.scopus.com/pages/publications/50749133755

U2 - 10.1016/0168-583X(93)95393-J

DO - 10.1016/0168-583X(93)95393-J

M3 - Article

SN - 0168-583X

VL - 79

SP - 478

EP - 482

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Simulation of recoil proton spectra and hydrogen depth profiles in amorphous silicon films

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