Single-electron manipulation to and from a SiO <inf>2</inf> surface by electrostatic force microscopy

Occupation of individual electron states near the surface of a Si O2 film is controlled by reversible single-electron tunneling to or from a metallic electrostatic force microscope probe. By switching the polarity of an applied dc bias between the probe and the sample to adjust the Fermi energy of the probe with respect to states near the dielectric surface, individual electrons are repeatably manipulated in and out of the sample. The single-electron charging and discharging is detected by frequency detection electrostatic force microscopy. © 2005 American Institute of Physics.