Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

Jereme Neuendank; Matthew Spear; Trace Wallace; Donald Wilson; Jose Solano; Gedeon Irumva; Ivan Sanchez Esqueda; Hugh J. Barnaby; Lawrence T. Clark; John Brunhaver; Marek Turowski; Esko Mikkola; David Hughart; Joshua Young; Jack Manuel; Sapan Agarwal; Bastiaan Vaandrager; Gyorgy Vizkelethy; Amos Gutierrez; James Trippe; Michael King; Edward Bielejec; Matthew Marinella

doi:10.1109/REDW56037.2022.9921478

Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

Jereme Neuendank
, Matthew Spear
, Trace Wallace
, Donald Wilson
, Jose Solano
, Gedeon Irumva
, Ivan Sanchez Esqueda
, Hugh J. Barnaby
, Lawrence T. Clark
, John Brunhaver
, Marek Turowski
, Esko Mikkola
, David Hughart
, Joshua Young
, Jack Manuel
, Sapan Agarwal
, Bastiaan Vaandrager
, Gyorgy Vizkelethy
, Amos Gutierrez
, James Trippe

Michael King, Edward Bielejec, Matthew Marinella

Los Alamos National Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, 60 Co gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 rad (SiO2) s gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.

Original language	English
Title of host publication	IEEE Radiation Effects Data Workshop
Volume	2022-July
DOIs	https://doi.org/10.1109/REDW56037.2022.9921478
State	Published - Jan 1 2022

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10.1109/REDW56037.2022.9921478

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Neuendank, J., Spear, M., Wallace, T., Wilson, D., Solano, J., Irumva, G., Esqueda, I. S., Barnaby, H. J., Clark, L. T., Brunhaver, J., Turowski, M., Mikkola, E., Hughart, D., Young, J., Manuel, J., Agarwal, S., Vaandrager, B., Vizkelethy, G., Gutierrez, A., ... Marinella, M. (2022). Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits. In IEEE Radiation Effects Data Workshop (Vol. 2022-July) https://doi.org/10.1109/REDW56037.2022.9921478

@inproceedings{329633ddffba4fd6b9761faa09baf5e1,

title = "Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits",

abstract = "Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, 60 Co gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 rad (SiO2) s gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.",

author = "Jereme Neuendank and Matthew Spear and Trace Wallace and Donald Wilson and Jose Solano and Gedeon Irumva and Esqueda, \{Ivan Sanchez\} and Barnaby, \{Hugh J.\} and Clark, \{Lawrence T.\} and John Brunhaver and Marek Turowski and Esko Mikkola and David Hughart and Joshua Young and Jack Manuel and Sapan Agarwal and Bastiaan Vaandrager and Gyorgy Vizkelethy and Amos Gutierrez and James Trippe and Michael King and Edward Bielejec and Matthew Marinella",

year = "2022",

month = jan,

day = "1",

doi = "10.1109/REDW56037.2022.9921478",

language = "English",

isbn = "9781665488563",

volume = "2022-July",

booktitle = "IEEE Radiation Effects Data Workshop",

}

Neuendank, J, Spear, M, Wallace, T, Wilson, D, Solano, J, Irumva, G, Esqueda, IS, Barnaby, HJ, Clark, LT, Brunhaver, J, Turowski, M, Mikkola, E, Hughart, D, Young, J, Manuel, J, Agarwal, S, Vaandrager, B, Vizkelethy, G, Gutierrez, A, Trippe, J, King, M, Bielejec, E & Marinella, M 2022, Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits. in IEEE Radiation Effects Data Workshop. vol. 2022-July. https://doi.org/10.1109/REDW56037.2022.9921478

TY - GEN

T1 - Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

AU - Neuendank, Jereme

AU - Spear, Matthew

AU - Wallace, Trace

AU - Wilson, Donald

AU - Solano, Jose

AU - Irumva, Gedeon

AU - Esqueda, Ivan Sanchez

AU - Barnaby, Hugh J.

AU - Clark, Lawrence T.

AU - Brunhaver, John

AU - Turowski, Marek

AU - Mikkola, Esko

AU - Hughart, David

AU - Young, Joshua

AU - Manuel, Jack

AU - Agarwal, Sapan

AU - Vaandrager, Bastiaan

AU - Vizkelethy, Gyorgy

AU - Gutierrez, Amos

AU - Trippe, James

AU - King, Michael

AU - Bielejec, Edward

AU - Marinella, Matthew

PY - 2022/1/1

Y1 - 2022/1/1

N2 - Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, 60 Co gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 rad (SiO2) s gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.

AB - Experimental results show the response of Global Foundries (GF) 12-nm bulk FinFET digital structures to 10 keV x-ray, 60 Co gamma rays, and heavy ions. Among the structures are circuits of 19 scan chains each made up of 15840 digital flip-flops (DFF). Other test structures include digital cells including modified inverters, two input NOR, three input NOR, two input NAND, and three input NAND. Heavy ion sources and 63.6 rad (SiO2) s gamma rays were provided by Sandia National Laboratories in Albuquerque, New Mexico. The x-ray source was provided by the SES facility at AFRL in Albuquerque, New Mexico. Single event upset (SEU) cross-sections vs. ion linear energy transfer (LET) for the digital flip-flop chains are extracted. Total ionizing dose (TID) experimental results for both the modified digital cells and DFF circuits are reported.

UR - https://www.scopus.com/pages/publications/85141034386

U2 - 10.1109/REDW56037.2022.9921478

DO - 10.1109/REDW56037.2022.9921478

M3 - Conference contribution

SN - 9781665488563

VL - 2022-July

BT - IEEE Radiation Effects Data Workshop

ER -

Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits

Abstract

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