Abstract
We study lasing in individual top-down fabricated GaN nanowires by optical pumping. We observe single mode emission with a side mode suppression of 15 dB, linewidths of less than 1 nm and thresholds as low as 250 kW/cm 2. © 2011 IEEE.
| Original language | English |
|---|---|
| Title of host publication | IEEE Photonic Society 24th Annual Meeting, PHO 2011 |
| Pages | 529-530 |
| Number of pages | 2 |
| DOIs | |
| State | Published - Dec 1 2011 |
| Externally published | Yes |
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