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Single-mode lasing from top-down fabricated gallium nitride nanowires

  • J. B. Wright
  • , Q. M. Li
  • , T. S. Luk
  • , I. Brener
  • , G. T. Wang
  • , K. R. Westlake
  • , L. F. Lester

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We study lasing in individual top-down fabricated GaN nanowires by optical pumping. We observe single mode emission with a side mode suppression of 15 dB, linewidths of less than 1 nm and thresholds as low as 250 kW/cm 2. © 2011 IEEE.
Original languageEnglish
Title of host publicationIEEE Photonic Society 24th Annual Meeting, PHO 2011
Pages529-530
Number of pages2
DOIs
StatePublished - Dec 1 2011
Externally publishedYes

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