Sintering of amorphous Si<inf>3</inf>N<inf>4</inf> nanoclusters: a molecular dynamics study of stress analysis

Jinghan Wang; Kenji Tsuruta; Andrey Omeltchenko; Rajiv K. Kalia; Priya Vashishta

Sintering of amorphous Si<inf>3</inf>N<inf>4</inf> nanoclusters: a molecular dynamics study of stress analysis

Jinghan Wang
, Kenji Tsuruta
, Andrey Omeltchenko
, Rajiv K. Kalia
, Priya Vashishta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

We investigate the onset and growth of the neck between amorphous Si3N4 nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	573-578
Number of pages	6
Volume	408
State	Published - Dec 1 1996
Externally published	Yes

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title = "Sintering of amorphous Si3N4 nanoclusters: a molecular dynamics study of stress analysis",

abstract = "We investigate the onset and growth of the neck between amorphous Si3N4 nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.",

author = "Jinghan Wang and Kenji Tsuruta and Andrey Omeltchenko and Kalia, \{Rajiv K.\} and Priya Vashishta",

year = "1996",

month = dec,

day = "1",

language = "English",

volume = "408",

pages = "573--578",

booktitle = "Materials Research Society Symposium - Proceedings",

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TY - GEN

T1 - Sintering of amorphous Si3N4 nanoclusters: a molecular dynamics study of stress analysis

AU - Wang, Jinghan

AU - Tsuruta, Kenji

AU - Omeltchenko, Andrey

AU - Kalia, Rajiv K.

AU - Vashishta, Priya

PY - 1996/12/1

Y1 - 1996/12/1

N2 - We investigate the onset and growth of the neck between amorphous Si3N4 nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.

AB - We investigate the onset and growth of the neck between amorphous Si3N4 nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.

UR - https://www.scopus.com/pages/publications/0030315375

M3 - Conference contribution

VL - 408

SP - 573

EP - 578

BT - Materials Research Society Symposium - Proceedings

ER -

Sintering of amorphous Si<inf>3</inf>N<inf>4</inf> nanoclusters: a molecular dynamics study of stress analysis

Abstract

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