Steps toward fabricating cryogenic CMOS compatible single electron devices

We describe the development of a novel silicon quantum bit (qubit) device architecture that involves using materials that are compatible with a Sandia National Laboratories (SNL) 0.35 μ complementary metal oxide semiconductor (CMOS) process intended to operate at l00mK. We describe how the qubit structure can be integrated with CMOS electronics, which is believed to have advantages for critical functions like fast single electron electrometry for readout compared to current approaches using radio frequency techniques. Critical materials properties are reviewed and preliminary characterization of the SNL CMOS devices at 4.2K is presented.