STM measurements of step-flow kinetics during atom removal by low-energy-ion bombardment of Si(001)

B. S. Swartzentruber; C. M. Matzke; D. L. Kendall; J. E. Houston

doi:10.1016/0039-6028(95)00042-9

STM measurements of step-flow kinetics during atom removal by low-energy-ion bombardment of Si(001)

B. S. Swartzentruber
, C. M. Matzke
, D. L. Kendall
, J. E. Houston

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We create mobile surface vacancies on vicinal Si(001) by bombarding the surface with 300 eV Xe ions at a substrate temperature of 465°C. The vacancies preferentially annihilate at the rough steps retracting them with respect to their smooth neighbors. This process leads to a bimodal terrace width distribution. The retraction of the rough steps due to the vacancy annihilation is in competition with the healing process by which the surface tries to maintain its equilibrium configuration of equally spaced steps. As the two competing processes balance, the surface reaches steady state and subsequent removal of surface atoms is manifest as simple step flow. © 1995.

Original language	English
Pages (from-to)	83-89
Number of pages	7
Journal	Surface Science
Volume	329
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(95)00042-9
State	Published - May 10 1995
Externally published	Yes

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@article{be0ba603f68148ea968fec26f023deaf,

title = "STM measurements of step-flow kinetics during atom removal by low-energy-ion bombardment of Si(001)",

abstract = "We create mobile surface vacancies on vicinal Si(001) by bombarding the surface with 300 eV Xe ions at a substrate temperature of 465°C. The vacancies preferentially annihilate at the rough steps retracting them with respect to their smooth neighbors. This process leads to a bimodal terrace width distribution. The retraction of the rough steps due to the vacancy annihilation is in competition with the healing process by which the surface tries to maintain its equilibrium configuration of equally spaced steps. As the two competing processes balance, the surface reaches steady state and subsequent removal of surface atoms is manifest as simple step flow. {\textcopyright} 1995.",

author = "Swartzentruber, \{B. S.\} and Matzke, \{C. M.\} and Kendall, \{D. L.\} and Houston, \{J. E.\}",

year = "1995",

month = may,

day = "10",

doi = "10.1016/0039-6028(95)00042-9",

language = "English",

volume = "329",

pages = "83--89",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - STM measurements of step-flow kinetics during atom removal by low-energy-ion bombardment of Si(001)

AU - Swartzentruber, B. S.

AU - Matzke, C. M.

AU - Kendall, D. L.

AU - Houston, J. E.

PY - 1995/5/10

Y1 - 1995/5/10

N2 - We create mobile surface vacancies on vicinal Si(001) by bombarding the surface with 300 eV Xe ions at a substrate temperature of 465°C. The vacancies preferentially annihilate at the rough steps retracting them with respect to their smooth neighbors. This process leads to a bimodal terrace width distribution. The retraction of the rough steps due to the vacancy annihilation is in competition with the healing process by which the surface tries to maintain its equilibrium configuration of equally spaced steps. As the two competing processes balance, the surface reaches steady state and subsequent removal of surface atoms is manifest as simple step flow. © 1995.

AB - We create mobile surface vacancies on vicinal Si(001) by bombarding the surface with 300 eV Xe ions at a substrate temperature of 465°C. The vacancies preferentially annihilate at the rough steps retracting them with respect to their smooth neighbors. This process leads to a bimodal terrace width distribution. The retraction of the rough steps due to the vacancy annihilation is in competition with the healing process by which the surface tries to maintain its equilibrium configuration of equally spaced steps. As the two competing processes balance, the surface reaches steady state and subsequent removal of surface atoms is manifest as simple step flow. © 1995.

UR - https://www.scopus.com/pages/publications/0038860096

U2 - 10.1016/0039-6028(95)00042-9

DO - 10.1016/0039-6028(95)00042-9

M3 - Article

SN - 0039-6028

VL - 329

SP - 83

EP - 89

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

STM measurements of step-flow kinetics during atom removal by low-energy-ion bombardment of Si(001)

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