Strain alleviation and light emission improvement of indium-doped β-Ga₂O₃ films

The structural and optical properties of the indium-doped β-Ga₂O₃ films were investigated. Doping the film with more indium alleviates the film strain, leading to the reduction of the size and amount of the holes in the films. The increase of annealing temperature enlarges the holes and makes the film surface flatter. For luminescence performance, addition of more indium slightly inhibits deep ultraviolet (275 nm) light emission of the films and greatly inhibits the near-infrared emission (720 nm). Annealing the β-Ga₂O₃ film at higher temperature improve its ultraviolet and near-infrared emission. The mechanisms were revealed.