Strained layer quantum well lasers grown by molecular beam epitaxy for longer wavelength high speed applications

Strained layer Gain As graded-index separate-confinement heterostructure (GRINSCH) quantum well lasers grown by molecular beam epitaxy (MBE) are now demonstrating performance comparable to, or superior to those grown by Organo-metallic Vapor Phase Epitaxy (OMVPE). The improvement in performance of the MBE grown lasers is largely due to optimized growth conditions which result from previous studies of the growth of strained layer channels for strained modulation doped field effect transistors (SMODFETs). In this presentation, discussion will cover the range of growth conditions for strained layer GalnAs/GaAs structures, the properties of these strained layer materials, and the DC and microwave performance of lasers fabricated from layers grown under these conditions.