Stress free wafer bonded GaAs-on-Si photonic devices and circuits

Yu Hwa Lo; Yanyan Xiong; Y. Zhou; Z. H. Zhu; A. A. Allerman; T. Hargett; R. Sieg; K. D. Choquette

Stress free wafer bonded GaAs-on-Si photonic devices and circuits

Yu Hwa Lo
, Yanyan Xiong
, Y. Zhou
, Z. H. Zhu
, A. A. Allerman
, T. Hargett
, R. Sieg
, K. D. Choquette

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

A low temperature bonding technique is proposed to solve the stress problem in the fusion bonding of GaAs device material to a Si substrate. The low temperature bonding process of a GaAs vertical cavity surface emitting laser (VCSEL) wafer began with chemical mechanical polishing (CMP) of the GaAs wafer to acquire a smooth surface morphology. Bonded GaAs/Si dummy samples were intentionally heated to a high temperature without GaAs substrate removal. When all parameters were optimized, debonding was not observed even at a temperature as high as 900 °C.

Original language	English
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages	427-428
Number of pages	2
Volume	2
State	Published - Dec 1 1999
Externally published	Yes

Cite this

@inproceedings{84f4090092da4b768cd37739b3f7a585,

title = "Stress free wafer bonded GaAs-on-Si photonic devices and circuits",

abstract = "A low temperature bonding technique is proposed to solve the stress problem in the fusion bonding of GaAs device material to a Si substrate. The low temperature bonding process of a GaAs vertical cavity surface emitting laser (VCSEL) wafer began with chemical mechanical polishing (CMP) of the GaAs wafer to acquire a smooth surface morphology. Bonded GaAs/Si dummy samples were intentionally heated to a high temperature without GaAs substrate removal. When all parameters were optimized, debonding was not observed even at a temperature as high as 900 °C.",

author = "Lo, \{Yu Hwa\} and Yanyan Xiong and Y. Zhou and Zhu, \{Z. H.\} and Allerman, \{A. A.\} and T. Hargett and R. Sieg and Choquette, \{K. D.\}",

year = "1999",

month = dec,

day = "1",

language = "English",

volume = "2",

pages = "427--428",

booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

}

TY - GEN

T1 - Stress free wafer bonded GaAs-on-Si photonic devices and circuits

AU - Lo, Yu Hwa

AU - Xiong, Yanyan

AU - Zhou, Y.

AU - Zhu, Z. H.

AU - Allerman, A. A.

AU - Hargett, T.

AU - Sieg, R.

AU - Choquette, K. D.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A low temperature bonding technique is proposed to solve the stress problem in the fusion bonding of GaAs device material to a Si substrate. The low temperature bonding process of a GaAs vertical cavity surface emitting laser (VCSEL) wafer began with chemical mechanical polishing (CMP) of the GaAs wafer to acquire a smooth surface morphology. Bonded GaAs/Si dummy samples were intentionally heated to a high temperature without GaAs substrate removal. When all parameters were optimized, debonding was not observed even at a temperature as high as 900 °C.

AB - A low temperature bonding technique is proposed to solve the stress problem in the fusion bonding of GaAs device material to a Si substrate. The low temperature bonding process of a GaAs vertical cavity surface emitting laser (VCSEL) wafer began with chemical mechanical polishing (CMP) of the GaAs wafer to acquire a smooth surface morphology. Bonded GaAs/Si dummy samples were intentionally heated to a high temperature without GaAs substrate removal. When all parameters were optimized, debonding was not observed even at a temperature as high as 900 °C.

UR - https://www.scopus.com/pages/publications/0033335108

M3 - Conference contribution

VL - 2

SP - 427

EP - 428

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -

Stress free wafer bonded GaAs-on-Si photonic devices and circuits

Abstract

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