Structural features of tilt grain boundaries in GaAs thin films

N. H. Cho; C. B. Carter

doi:10.1007/BF03028210

Structural features of tilt grain boundaries in GaAs thin films

N. H. Cho
, C. B. Carter

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Σ=3 (11̄ 5̄)A/(11̄ 1̄)B, Σ=19 (22̄ 7̄)A/(41̄5)B, and low-angle tilt grain boundaries in GaAs thin films were investigated by high-resolution transmission electron microscopy (HRTEM). Models for the atomic structure of the boundaries are proposed in this study. The structural unit for the boundaries consists of 5-and 7-member rings. The polarity of the grain on either side of the boundaries was confirmed by the convergent beam electron diffraction method. {110} low-angle tilt grain boundaries were observed to consist of a/2<110> edge dislocations. Anti-site type bonds are present at the core of the dislocations.

Original language	English
Pages (from-to)	181-187
Number of pages	7
Journal	Metals and Materials International
Volume	6
Issue number	3
DOIs	https://doi.org/10.1007/BF03028210
State	Published - Jan 1 2000
Externally published	Yes

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@article{3b1092a0b6b649e6aa6353aec45787d4,

title = "Structural features of tilt grain boundaries in GaAs thin films",

abstract = "Σ=3 (1{\=1} {\=5})A/(1{\=1} {\=1})B, Σ=19 (2{\=2} {\=7})A/(4{\=1}5)B, and low-angle tilt grain boundaries in GaAs thin films were investigated by high-resolution transmission electron microscopy (HRTEM). Models for the atomic structure of the boundaries are proposed in this study. The structural unit for the boundaries consists of 5-and 7-member rings. The polarity of the grain on either side of the boundaries was confirmed by the convergent beam electron diffraction method. \{110\} low-angle tilt grain boundaries were observed to consist of a/2<110> edge dislocations. Anti-site type bonds are present at the core of the dislocations.",

author = "Cho, \{N. H.\} and Carter, \{C. B.\}",

year = "2000",

month = jan,

day = "1",

doi = "10.1007/BF03028210",

language = "English",

volume = "6",

pages = "181--187",

journal = "Metals and Materials International",

issn = "1225-9438",

publisher = "Korean Institute of Metals and Materials",

number = "3",

}

TY - JOUR

T1 - Structural features of tilt grain boundaries in GaAs thin films

AU - Cho, N. H.

AU - Carter, C. B.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Σ=3 (11̄ 5̄)A/(11̄ 1̄)B, Σ=19 (22̄ 7̄)A/(41̄5)B, and low-angle tilt grain boundaries in GaAs thin films were investigated by high-resolution transmission electron microscopy (HRTEM). Models for the atomic structure of the boundaries are proposed in this study. The structural unit for the boundaries consists of 5-and 7-member rings. The polarity of the grain on either side of the boundaries was confirmed by the convergent beam electron diffraction method. {110} low-angle tilt grain boundaries were observed to consist of a/2<110> edge dislocations. Anti-site type bonds are present at the core of the dislocations.

AB - Σ=3 (11̄ 5̄)A/(11̄ 1̄)B, Σ=19 (22̄ 7̄)A/(41̄5)B, and low-angle tilt grain boundaries in GaAs thin films were investigated by high-resolution transmission electron microscopy (HRTEM). Models for the atomic structure of the boundaries are proposed in this study. The structural unit for the boundaries consists of 5-and 7-member rings. The polarity of the grain on either side of the boundaries was confirmed by the convergent beam electron diffraction method. {110} low-angle tilt grain boundaries were observed to consist of a/2<110> edge dislocations. Anti-site type bonds are present at the core of the dislocations.

UR - https://www.scopus.com/pages/publications/0034195923

U2 - 10.1007/BF03028210

DO - 10.1007/BF03028210

M3 - Article

SN - 1225-9438

VL - 6

SP - 181

EP - 187

JO - Metals and Materials International

JF - Metals and Materials International

IS - 3

ER -

Structural features of tilt grain boundaries in GaAs thin films

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