Abstract
Electrical and optoelectronic properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) can be tuned by exploiting their structural phase transitions. Here semiconducting (2H) to metallic (1T) phase transition is investigated in a strained MoWSe2 monolayer using molecular dynamics (MD) simulations. Novel intermediate structures called α and β are found between the 2H and 1T phases. These intermediate structures are similar to those observed in a 2D MoS2 by scanning transmission electron microscopy. A deep generative model, namely the variational autoencoder (VAE) trained by MD data, is used to generate novel heterostructures with α and β interfaces. Quantum simulations based on density functional theory show that these heterostructures are stable and suitable for novel nanoelectronics applications.
| Original language | English |
|---|---|
| Journal | Physical Review B |
| Volume | 100 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jul 30 2019 |
| Externally published | Yes |
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