Abstract
Equilibrium arid non-equilibrium molecular-dynamics simulations are performed to determine the structure, mechanical properties, and thermal conductivity of amorphous silicon nitride under uniform dilation. For mass densities below ρ = 2.6 g/cc, we observe a significant growth of pores. Near 2.0 g/cc the average pore volume diverges with an exponent of 1.95. The thermal conductivity and Young's modulus are found to scale as ρ1.5 and ρ3.6 respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 667-672 |
| Number of pages | 6 |
| Journal | EPL |
| Volume | 33 |
| Issue number | 9 |
| DOIs | |
| State | Published - Mar 20 1996 |
| Externally published | Yes |
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